ELECTROCHROMIC DEVICE

• US 20120147448A1
• Filed: 02/10/2010
• Published: 06/14/2012
• Est. Priority Date: 02/10/2009
• Status: Abandoned Application

• Current Assignee: Applied Nanotech Holdings Incorporated (Nano Magic, Inc.)
• Original Assignee: Applied Nanotech Holdings Incorporated (Nano Magic, Inc.)
• Inventors: Yaniv, Zvi, Chidichimo, Giuseppe, Imbardelli, Daniela, De Simone, Bruna Clara
• Application Number:
  US13/148,719
• Publication Number:
  US 20120147448A1
• Time in Patent Office: Days
• US Class Current: 359/265
• CPC Class Codes: G02F 1/155 Electrodes
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

A method for manufacturing an electrochromic window positions a pattern of conductive lines over a first transparent substrate, a transparent conductive film over the pattern of conductive lines and first transparent substrate, and an electrochromic layer over the transparent conductive film, wherein the transparent conductive layer is a physical barrier separating the electrochromic layer from the pattern of conductive lines. The first transparent substrate may be flexible. The pattern of conductive lines and transparent conductive film may be deposited and processed at a temperature less than 180 degrees C. The pattern of conductive lines may be deposited on the first transparent substrate by printing techniques.

Claims

1. An apparatus comprising:

a first transparent substrate;

a pattern of conductive lines positioned on the first transparent substrate;

a transparent conductive film positioned over the pattern of conductive lines and first transparent substrate; and

an electrochromic layer positioned on the transparent conductive film, wherein the transparent conductive layer is a physical barrier separating the electrochromic layer from the pattern of conductive lines.

2. The apparatus as recited in claim 1, further comprising a second transparent substrate positioned on the electrochromic layer so that the electrochromic layer, transparent conductive film and pattern of conductive lines are sandwiched between the first and second transparent substrates, wherein the second transparent substrate further comprises a pattern of conductive lines positioned on the second transparent substrate and a transparent conductive film positioned over the pattern of conductive lines and second transparent substrate.

3. The apparatus as recited in claim 2, wherein the first and second transparent substrates are flexible.

4. The apparatus as recited in claim 3, further comprising an adhesive layer on an external side of the second transparent substrate.

5. The apparatus as recited in claim 1, wherein the apparatus has less than a 1 ohm/sq resistance to electrical energy utilized to activate the electrochromic layer.

6. The apparatus as recited in claim 1, wherein the transparent conductive layer is chemically inert to the electrochromic layer.

7. The apparatus as recited in claim 1, wherein the first transparent substrate comprises PET.

8. The apparatus as recited in claim 1, wherein the transparent conductive film has an optical transmission greater than 70%.

9. The apparatus as recited in claim 1, wherein the transparent conductive film has an optical transmission greater than 80%.

10. The apparatus as recited in claim 1, wherein the transparent conductive film has a sheet resistance less than 500 ohm/sq.

11. The apparatus as recited in claim 1, wherein the transparent conductive film has a sheet resistance less than 100 ohm/sq.

12. The apparatus as recited in claim 1, wherein the transparent conductive film has an optical transmission greater than 70% and a sheet resistance less than 100 ohm/sq.

13. The apparatus as recited in claim 8, wherein the transparent conductive film comprises ITO.

14. The apparatus as recited in claim 13, wherein the ITO film has an average thickness less than 2 micrometers.

15. The apparatus as recited in claim 13, wherein the ITO film has an energy band gap greater than 4.125 eV.

16. The apparatus as recited in claim 13, wherein the ITO film has a sheet resistance less than 100 ohm/sq.

17. The apparatus as recited in claim 13, wherein the ITO film has a sheet resistance less than 40 ohm/sq and an energy band gap greater than 4.125 eV.

18. A method for manufacturing an electrochromic window comprising:

positioning a pattern of conductive lines over a first transparent substrate;

positioning a transparent conductive film over the pattern of conductive lines and first transparent substrate; and

positioning an electrochromic layer over the transparent conductive film, wherein the transparent conductive layer is a physical barrier separating the electrochromic layer from the pattern of conductive lines.

19. The method as recited in claim 18, further comprising positioning a second transparent substrate over the electrochromic layer so that the electrochromic layer, transparent conductive film and pattern of conductive lines are sandwiched between the first and second transparent substrates.

20. The method as recited in claim 19, further comprising:

positioning a second pattern of conductive lines over the second transparent substrate; and

positioning a second transparent conductive film over the second pattern of conductive lines and second transparent substrate, wherein the second transparent conductive layer is a physical barrier separating the electrochromic layer from the second pattern of conductive lines.

21. The method as recited in claim 20, wherein the first transparent substrate is flexible.

22. The method as recited in claim 20, wherein the transparent conductive film comprises ITO deposited over the pattern of conductive lines and the first transparent substrate at a temperature less than 180 degrees C.

23. The method as recited in claim 22, wherein the ITO film has an energy band gap greater than 4.125 eV, an optical transmission greater than 75%, and a sheet resistance less than 100 ohm/sq.

24. The method as recited in claim 23, wherein the ITO film has a sheet resistance less than 40 ohm/sq.

25. The method as recited in claim 18, wherein the transparent conductive film has an optical transmission greater than 80% and a sheet resistance less than 500 ohm/sq.

26. The method as recited in claim 25, wherein the transparent conductive film has a sheet resistance less than 100 ohm/sq.

27. The method as recited in claim 18, wherein the transparent conductive film comprises ITO deposited with a gas flow rate of oxygen greater than 1 sccm, but less than 30 sccm.

28. The method as recited in claim 18, wherein the pattern of conductive lines is deposited on the first transparent substrate using inkjetting, flexography, or offset lithography.

29. The method as recited in claim 28, wherein the pattern of conductive lines is deposited as a metallic ink, wherein the method further comprises sintering the metallic ink.

30. The method as recited in claim 29, wherein the sintering is thermal.

31. The method as recited in claim 29, wherein the sintering is photo.

32. The method as recited in claim 29, wherein the sintering is performed at less than 180 degrees C.

33. The method as recited in claim 18, wherein the transparent conductive film is deposited over the pattern of conductive lines and the first transparent substrate with good step coverage.