SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
13. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer over the gate insulating layer;
performing a first heat treatment on the oxide semiconductor layer;
adding oxygen into the oxide semiconductor layer; and
performing a second heat treatment on the oxide semiconductor layer after adding oxygen,wherein at least a top surface of the oxide semiconductor layer comprises a crystal region.
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Abstract
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
44 Citations
34 Claims
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13. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer; performing a first heat treatment on the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer; and performing a second heat treatment on the oxide semiconductor layer after adding oxygen, wherein at least a top surface of the oxide semiconductor layer comprises a crystal region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor layer over the gate insulating layer; performing a first heat treatment on the oxide semiconductor layer; adding oxygen into the oxide semiconductor layer; performing a second heat treatment on the oxide semiconductor layer after adding oxygen; forming an insulating layer containing silicon and oxygen over the oxide semiconductor layer; and performing a third heat treatment on the insulating layer. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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31-1. The method for manufacturing a semiconductor device according to claim 24, wherein the oxide semiconductor layer is formed by using an In—
- Ga—
Zn—
O based oxide.
- Ga—
Specification