OXIDE MATERIAL AND SEMICONDUCTOR DEVICE
First Claim
1. An oxide material comprising a plurality of crystals with c-axis alignment,wherein each of the plurality of crystals comprises atoms arranged to have a triangular or hexagonal shape seen from a direction perpendicular to an a-b plane, andwherein one of a direction of a a-axis and a direction of a b-axis of a first crystal of the plurality of crystals is different from that of a second crystal of the plurality of crystals, in the a-b plane.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.
13 Citations
16 Claims
-
1. An oxide material comprising a plurality of crystals with c-axis alignment,
wherein each of the plurality of crystals comprises atoms arranged to have a triangular or hexagonal shape seen from a direction perpendicular to an a-b plane, and wherein one of a direction of a a-axis and a direction of a b-axis of a first crystal of the plurality of crystals is different from that of a second crystal of the plurality of crystals, in the a-b plane.
-
2. An oxide material comprising a plurality of crystals with c-axis alignment,
wherein each of the plurality of crystals comprises atoms arranged to have a triangular or hexagonal shape seen from a direction perpendicular to a surface or an interface, and wherein a first crystal of the plurality of crystals has a structure in which a second crystal of the plurality of crystals is rotated around a c-axis.
-
13. A semiconductor device comprising:
-
a gate electrode comprising an oxide material; and a gate insulating film adjacent to the gate electrode, wherein the oxide material comprises a plurality of crystals with c-axis alignment, wherein each of the plurality of crystals comprises atoms arranged to have a triangular or hexagonal shape seen from a direction perpendicular to an a-b plane, a surface, or an interface, and wherein one of a direction of a a-axis and a direction of a b-axis of a first crystal of the plurality of crystals is different from that of a second crystal of the plurality of crystals, in the a-b plane, and wherein the oxide material has conductivity.
-
-
14. A semiconductor device comprising:
-
a gate electrode; a gate insulating film adjacent to the gate electrode; and a semiconductor layer comprising an oxide material, and being adjacent to the gate insulating film; wherein the oxide material comprises a plurality of crystals with c-axis alignment, wherein each of the plurality of crystals comprises the atoms arranged to have a triangular or hexagonal shape in an a-b plane, wherein one of a direction of a a-axis and a direction of a b-axis of a first crystal of the plurality of crystals is different from that of a second crystal of the plurality of crystals, in the a-b plane. - View Dependent Claims (15, 16)
-
Specification