Power Converter for a Memory Module

• US 20120154013A1
• Filed: 04/18/2011
• Published: 06/21/2012
• Est. Priority Date: 12/17/2010
• Status: Active Grant

• Current Assignee: Altera Corporation (Intel Corporation)
• Original Assignee: Enpirion, Inc. (MediaTek, Inc.)
• Inventors: Mera, Narciso, Lopata, Douglas Dean, Lotfi, Ashraf W.
• Granted Patent: US 8,867,295 B2
• Time in Patent Office: Days
• US Class Current: 327/333
• CPC Class Codes: G11C 11/4074 Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence
• CPC Class Codes: H02M 7/4837 Flying capacitor converters

Abstract

An apparatus including a memory module and power converter and method of operating the same. In one embodiment, the apparatus includes a memory module, located on a circuit board, configured to operate from a first voltage and a second voltage being a multiple of the first voltage. The apparatus also includes a power converter employing a switched-capacitor power train, located on the circuit board, configured to provide the second voltage for the memory module from the first voltage.

Claims

1. An apparatus, comprising:

a memory module, located on a circuit board, configured to operate from a first voltage and a second voltage being a multiple of said first voltage; and

a power converter employing a switched-capacitor power train, located on said circuit board, configured to provide said second voltage for said memory module from said first voltage.

2. The apparatus as recited in claim 1 further comprising another memory module, located on said circuit board, configured to operate from said first voltage and said second voltage, said power converter being configured to provide said second voltage for said another memory module from said first voltage.

3. The apparatus as recited in claim 2 wherein a path resistance from said power converter to said memory module and said another memory module is substantially balanced.

4. The apparatus as recited in claim 1 wherein said power converter is substantially centrally located on said circuit board.

5. The apparatus as recited in claim 1 wherein said power converter is operable in a light-load mode of operation with a switching frequency dependent on a current drain of said memory module at said second voltage.

6. The apparatus as recited in claim 1 wherein power switches of said switched-capacitor power train are alternately enabled to conduct to produce said second voltage as an output voltage of said power converter.

7. The apparatus as recited in claim 1 wherein said power converter is embodied in a silicon die coupled to a leadframe through solder bumps.

8. The apparatus as recited in claim 1 wherein said solder bumps are copper.

9. The apparatus as recited in claim 1 wherein said multiple is about one-half.

10. The apparatus as recited in claim 1 wherein said memory module is a digital random-access memory module.

11. A method, comprising:

providing a first voltage to a memory module located on a circuit board with a power converter employing a switched-capacitor power train located on said circuit board; and

providing a second voltage being a multiple of said first voltage to said memory module with said power converter from said first voltage.

12. The method as recited in claim 11, further comprising:

providing said first voltage to another memory module located on said circuit board with said power converter; and

providing said second voltage to said another memory module with said power converter from said first voltage.

13. The method as recited in claim 12 wherein a path resistance from said power converter to said memory module and said another memory module is substantially balanced.

14. The method as recited in claim 11 wherein said power converter is substantially centrally located on said circuit board.

15. The method as recited in claim 11 wherein said power converter is operable in a light-load mode of operation with a switching frequency dependent on a current drain of said memory module at said second voltage.

16. The method as recited in claim 11 wherein power switches of said switched-capacitor power train are alternately enabled to conduct to produce said second voltage as an output voltage of said power converter.

17. The method as recited in claim 11 wherein said power converter is embodied in a silicon die coupled to a leadframe through solder bumps.

18. The method as recited in claim 17 wherein said solder bumps are copper.

19. The method as recited in claim 11 wherein said multiple is about one-half.

20. The method as recited in claim 11 wherein said memory module is a digital random-access memory module.