Gallium-Nitride-on-Handle Substrate Materials and Devices and Method of Manufacture

• US 20120187412A1
• Filed: 01/24/2011
• Published: 07/26/2012
• Est. Priority Date: 01/24/2011
• Status: Active Grant

• Current Assignee: SL Technology Incorporated (Reliv' International, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: D'Evelyn, Mark P., Chakraborty, Arpan, Houck, William
• Granted Patent: US 8,786,053 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83193 wherein the layer connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 29/02 Semiconductor bodies ; Multistep manufacturing processes therefor
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13062 : Junction field-effect transistor [JFET]
• CPC Class Codes: H01L 33/007 : comprising nitride compounds
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 : Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/382 : the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements

Abstract

A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Claims

8-1. The device of claim 1 wherein the gallium and nitrogen containing region comprises a mesa.

13. A gallium and nitrogen containing device comprising:

a handle substrate member having a first surface region and a second surface region;

at least one n-contact region overlying the first surface region;

a gallium and nitrogen containing material overlying the second region, the gallium and nitrogen containing material being transferred overlying the second region, the gallium and nitrogen containing material having a core region;

an interface region overlying the gallium and nitrogen containing material;

at least one n-type epitaxial growth region overlying the interface region;

a core structure extending from the core region within the overlying gallium and nitrogen containing material and configured to extend through the at least one n-type epitaxial growth region;

an active region overlying the at least one n-type epitaxial growth region;

a p-type region overlying the first active region and the second active region; and

at least one p-contact region overlying the p-type region.

14. The device of claim 13 wherein the interface region comprises a defect density of less than about 106-107 cm-2 within the matrix region between cores.

15. The device of claim 13 wherein the gallium and nitrogen containing material transferred overlying the second region.

16. The device of claim 13 wherein the gallium and nitrogen containing material is provided from a dot core substrate.

17. The device of claim 13 wherein the second surface comprises a patterned, textured, or roughened surface structure.

18. The device of claim 13 wherein the p-contact region is placed in contact with the matrix region between dot cores in the p-type region and at least one street provides an electrical barrier between the p-contact region and at least one dot core region.

19. The device of claim 18 wherein the dot cores form a square array and a die is approximately square.