SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PROCESS FOR PRODUCTION THEREOF
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Abstract
One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
5 Citations
25 Claims
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1-16. -16. (canceled)
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17. A semiconductor light-emitting device having a semiconductor layer the surface of which a relief structure and an electrode are formed on and light is extracted from, wherein said relief structure is formed in the area of 10 μ
- m or less from the electrode.
- View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
Specification