IN-GA-ZN-TYPE OXIDE, OXIDE SINTERED BODY, AND SPUTTERING TARGET

• US 20120216710A1
• Filed: 11/17/2010
• Published: 08/30/2012
• Est. Priority Date: 11/19/2009
• Status: Active Grant

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Yano, Koki, Itose, Masayuki, Kawashima, Hirokazu
• Granted Patent: US 8,784,699 B2
• Time in Patent Office: Days
• US Class Current: 106/286.2
• CPC Class Codes: C01G 15/00 Compounds of gallium, indium or thallium
• CPC Class Codes: C01G 15/006 Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
• CPC Class Codes: C01G 9/02 Oxides; Hydroxides
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3286 Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
• CPC Class Codes: C04B 2235/5409 expressed by specific surface values
• CPC Class Codes: C04B 2235/6562 Heating rate
• CPC Class Codes: C04B 2235/6565 Cooling rate
• CPC Class Codes: C04B 2235/6567 Treatment time
• CPC Class Codes: C04B 2235/658 Atmosphere during thermal treatment
• CPC Class Codes: C04B 2235/6585 at an oxygen percentage above that of air
• CPC Class Codes: C04B 2235/664 Reductive annealing
• CPC Class Codes: C04B 2235/666 Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
• CPC Class Codes: C04B 2235/77 Density
• CPC Class Codes: C04B 2235/80 Phases present in the sintered or melt-cast ceramic products other than the main phase
• CPC Class Codes: C04B 2235/963 Surface properties, e.g. surface roughness
• CPC Class Codes: C04B 35/453 based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
• CPC Class Codes: C04B 35/62675 characterised by the treatment temperature
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/3414 : Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: H01L 21/02554 : Oxides
• CPC Class Codes: H01L 21/02565 : Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 : Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/66742 : Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 : of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 : having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An oxide including indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ) of 7.0° to 8.4°, 30.6° to 32.0°, 33.8° to 35.8°, 53.5° to 56.5° and 56.5° to 59.5° in an X-ray diffraction measurement (CuKα rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ) of 30.6° to 32.0° and 33.8° to 35.8° is a main peak and the other is a sub peak.

Claims

1. An oxide comprising indium (In), gallium (Ga) and zinc (Zn), wherein diffraction peaks are observed at positions corresponding to incident angles (2θ

) of 7.0°

to 8.4°

, 30.6°

to 32.0°

, 33.8°

to 35.8°

, 53.5°

to 56.5° and

56.5°

to 59.5°

in an X-ray diffraction measurement (CuKα

rays), and one of diffraction peaks observed at positions corresponding to incident angles (2θ

) of 30.6°

to 32.0° and

33.8°

to 35.8°

is a main peak and the other is a sub peak.

2. The oxide according to claim 1, wherein the atomic ratio of indium (In), gallium (Ga) and zinc (Zn) satisfies the following formulas (1) and (2):

0.45≦

Zn/(In+Ga+Zn)≦

0.60 

 

(1)

0.21≦

Ga/(In+Ga)≦

0.29 

 

(2).

3. The oxide according to claim 1, wherein all metal elements contained in the oxide consist essentially of In, Ga and Zn.

4. An oxide sintered body which comprises the oxide according to claim 1.

5. The oxide sintered body according to claim 4, wherein the atomic ratio of indium (In), gallium (Ga) and zinc (Zn) satisfies the following formulas (1′

) and (2′

);

0.15≦

Zn/(In+Ga+Zn)≦

0.65 

 

(1′

)

0.05<

Ga/(In+Ga)<

0.45 

 

(2′

).

6. A sputtering target comprising the oxide sintered body according to claim 4.

7. An oxide thin film formed by using the sputtering target according to claim 6.

8. A method for producing the sputtering target according to claims 6, comprising the following steps of:

(a) preparing a shaped body with a thickness of 5.5 mm or more;

(b) sintering the shaped body at a temperature of 1380°

C. or more and 1520°

C. or less for 4 to 24 hours; and

(c) grinding one or both surfaces of the sintered shaped body by 0.1 mm or more.