DISPLAY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

• US 20120218495A1
• Filed: 02/21/2012
• Published: 08/30/2012
• Est. Priority Date: 02/28/2011
• Status: Active Grant

• Current Assignee: JDI Design and Development GK
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Oshima, Yoshihiro
• Granted Patent: US 8,643,801 B2
• Time in Patent Office: Days
• US Class Current: 349/61
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13685 Top gates
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 59/875 Arrangements for extracting light from the devices

Abstract

A display device includes a substrate; a display element; a thin film transistor, and having a first semiconductor oxide film including a source region and a drain region, the first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of the channel region in parts of the source region and the drain region in a depth direction from upper surfaces thereof; a second semiconductor oxide film having a second low resistance area whose oxygen concentration is lower than that of the channel region in a part in the depth direction from the upper surface; and a high resistance film covering the thin film transistor, the second semiconductor oxide film, and the substrate, made of a metallic oxide, having a first translucent area in an area contacting the first low resistance area, and having a second translucent area.

Claims

1. A display device, comprising:

a substrate;

a display element provided on said substrate;

a thin film transistor provided on said substrate, and having a first semiconductor oxide film including a source region and a drain region on both sides of a channel region, said first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of said channel region in at least parts of said source region and said drain region in a depth direction from upper surfaces of said source region and said drain region;

a second semiconductor oxide film provided in an area, of said substrate, other than the area in which said thin film transistor is provided, and having a second low resistance area whose oxygen concentration is lower than that of said channel region in at least a part in the depth direction from the upper surface; and

a high resistance film covering said thin film transistor, said second semiconductor oxide film, and said substrate, made of a metallic oxide, having a first translucent area in an area contacting said first low resistance area, and having a second translucent area in an area contacting said second low resistance area.

2. The display device according to claim 1, wherein

each of said first translucent area and said second translucent area is formed from an aluminum oxide film.

3. The display device according to claim 1, wherein

said first semiconductor oxide film and said second semiconductor oxide film are continuously formed.

4. The display device according to claim 1, wherein

said first semiconductor oxide film is provided on said substrate,

a gate insulating film and a gate electrode are provided in this order on said channel region of said first semiconductor oxide film so as to have the same shape,

said high resistance film and an interlayer insulating film are provided in this order on a surface of said first semiconductor oxide film, said gate insulating film, and said the gate electrode, and

a source electrode and a drain electrode are connected to said first low resistance areas through connection holes, provided in said interlayer insulating film and said high resistance film.

5. The display device according to claim 1, wherein

said display element is an organic electroluminescence element having a first electrode, an organic layer including a light emitting layer, and a second electrode in this order from the substrate side, and a light emitted from said organic electroluminescence element is transmitted through said second translucent area to be taken out from the side of said substrate.

6. The display device according to claim 1, wherein

said display element is a liquid crystal display element,

an illumination portion is provided on a back surface side of said substrate, and

a light emitted from said illumination portion is transmitted through said second translucent area to be made incident to said liquid crystal display element.

7. An electronic apparatus, comprising:

a display device including

a substrate,

a display element provided on said substrate,

a thin film transistor provided on said substrate, and having a first semiconductor oxide film including a source region and a drain region on both sides of a channel region, said first semiconductor oxide film having first low resistance areas each of whose oxygen concentration is lower than that of said channel region in at least parts of said source region and said drain region in a depth direction from upper surfaces of said source region and said drain region,

a second semiconductor oxide film provided in an area, of said substrate, other than the area in which said thin film transistor is provided, and having a second low resistance area whose oxygen concentration is lower than that of said channel region in at least a part in the depth direction from the upper surface, and

a high resistance film covering said thin film transistor, said second semiconductor oxide film, and said substrate, made of a metallic oxide, having a first translucent area in an area contacting said first low resistance area, and having a second translucent area in an area contacting said second low resistance area.