METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first insulating layer over a substrate;
introducing the substrate having the first insulating layer into a treatment chamber;
introducing a sputtering gas into the treatment chamber;
forming an oxide semiconductor layer over the first insulating layer using a metal oxide target by sputtering in the treatment chamber;
removing moisture from the treatment chamber during introducing the sputtering gas; and
performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment at 200°
C. to 700°
C. in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere.
0 Assignments
0 Petitions
Accused Products
Abstract
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
21 Citations
23 Claims
-
1. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a first insulating layer over a substrate; introducing the substrate having the first insulating layer into a treatment chamber; introducing a sputtering gas into the treatment chamber; forming an oxide semiconductor layer over the first insulating layer using a metal oxide target by sputtering in the treatment chamber; removing moisture from the treatment chamber during introducing the sputtering gas; and performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment at 200°
C. to 700°
C. in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate having the gate electrode layer and the gate insulating layer into a treatment chamber; introducing a sputtering gas into the treatment chamber; forming an oxide semiconductor layer over the gate insulating layer using a metal oxide target by sputtering in the treatment chamber; removing moisture from the treatment chamber during introducing the sputtering gas; performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment at 200°
C. to 700°
C. in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere; andforming a source electrode layer and a drain electrode layer over the dehydrated or dehydrogenated oxide semiconductor layer to which oxygen has been supplied. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for manufacturing a semiconductor device comprising the steps of:
-
forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate having the gate electrode layer and the gate insulating layer into a treatment chamber; introducing a sputtering gas into the treatment chamber; forming an oxide semiconductor layer over the gate insulating layer using a metal oxide target by sputtering in the treatment chamber; removing moisture from the treatment chamber during introducing the sputtering gas; performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment at 200°
C. to 700°
C. in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an atmosphere of oxygen and nitrogen or an air atmosphere having a dew point of lower than or equal to −
40°
C.; andforming a source electrode layer and a drain electrode layer over the dehydrated or dehydrogenated oxide semiconductor layer to which oxygen has been supplied. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
-
Specification