SOI DEVICE WITH DTI AND STI

  • US 20120261792A1
  • Filed: 04/17/2011
  • Published: 10/18/2012
  • Est. Priority Date: 04/17/2011
  • Status: Active Grant
  • ×
    • Pin Icon | RPX Insight
    • Pin
First Claim
Patent Images

1. An SOI structure comprising:

  • a semiconductor on insulator (SOI) substrate including a top semiconductor layer, an intermediate buried oxide (BOX) layer and a bottom substrate;

    at least two wells in the bottom substrate;

    a deep trench isolation (DTI) separating said two wells, the DTI having a top portion extending through the BOX layer and top semiconductor layer and a bottom portion within the bottom substrate wherein the bottom portion has a width that is larger than a width of the top portion; and

    at least two semiconductor devices in the semiconductor layer located over one of the wells, the at least two semiconductor devices being separated by a shallow trench isolation (STI) within the top semiconductor layer.

View all claims
  • 6 Assignments
    ×
    ×

    Thank you for your feedback

    ×
    ×