COPPER PILLAR BUMP WITH NON-METAL SIDEWALL PROTECTION STRUCTURE AND METHOD OF MAKING THE SAME
First Claim
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1. An integrated circuit device, comprising:
- a conductive pillar formed over a substrate, the conductive pillar having a sidewall surface and a top surface;
an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar, the UBM layer having a surface region; and
a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer,wherein the protection structure is formed of a non-metal material.
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Abstract
This description relates to an integrated circuit device including a conductive pillar formed over a substrate. The conductive pillar has a sidewall surface and a top surface. The integrated circuit device further includes an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar. The UBM layer has a surface region. The integrated circuit device further includes a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer. The protection structure is formed of a non-metal material.
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Citations
20 Claims
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1. An integrated circuit device, comprising:
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a conductive pillar formed over a substrate, the conductive pillar having a sidewall surface and a top surface; an under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar, the UBM layer having a surface region; and a protection structure on the sidewall surface of the conductive pillar and the surface region of the UBM layer, wherein the protection structure is formed of a non-metal material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit device, comprising:
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a conductive pillar on a substrate, the conductive pillar having a sidewall surface and a top surface; a first under-bump-metallurgy (UBM) layer between the substrate and the conductive pillar; a second UBM layer between the first UBM layer and the conductive pillar, the second UBM layer having a surface region adjacent to and extending from the sidewall surface of the conductive pillar; a protection structure on the sidewall surface of the conductive pillar and the surface region; and a plurality of cap layers on the top surface of the conductive pillar. - View Dependent Claims (8, 9, 10, 11)
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12. A method of making an integrated circuit device, the method comprising:
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forming at least one under bump metallurgy (UBM) layer over a substrate; forming a conductive pillar over the at least one UBM layer, the conductive pillar including a top surface and a sidewall surface; depositing a protection structure over the top surface and the sidewall surface; etching the protection structure to remove the protection structure over the top surface and remove a portion of the protection structure over the sidewall surface, the etched protection structure covering a surface region of the at least one UBM layer; and etching the at least one UBM layer to remove portions of the at least one UBM layer extending beyond the surface region. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification