METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20120298998A1
• Filed: 05/17/2012
• Published: 11/29/2012
• Est. Priority Date: 05/25/2011
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, MASHIYAMA, Mitsuo, OKAZAKI, Kenichi, NAKASHIMA, Motoki, KISHIDA, Hideyuki, WATANABE, Masahiro
• Application Number:
  US13/473,653
• Publication Number:
  US 20120298998A1
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/823412 with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
• CPC Class Codes: H01L 21/82345 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823475 interconnection or wiring or contact manufacturing related aspects
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1233 with different thicknesses of the active layer in different devices
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78672 Polycrystalline or microcrystalline silicon transistor
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Claims

1. A method for forming an oxide semiconductor film, comprising:

supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which partial pressures of a gas having a mass-to-charge ratio of 18, a gas having a mass-to-charge ratio of 28, and a gas having a mass-to-charge ratio of 44, which are measured with a quadrupole mass analyzer, are each 3×

10<sup>−

5</sup> Pa or less; and

forming an oxide semiconductor film in the deposition chamber by a sputtering method.

2. A method for forming an oxide semiconductor film, comprising:

supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which leakage rates of a gas having a mass-to-charge ratio of 44, a gas having a mass-to-charge ratio of 18, and a gas having a mass-to-charge ratio of 28, which are measured with a quadrupole mass analyzer, are 3×

10<sup>−

6</sup> Pa·

m³/s or less, 1×

10<sup>−

7</sup> Pa·

m³/s or less, and 1×

10<sup>−

5</sup> Pa·

m³/s, respectively; and

forming an oxide semiconductor film in the deposition chamber by a sputtering method.

3. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film;

a gate insulating film in contact with the oxide semiconductor film; and

a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,

wherein a carbon concentration in the oxide semiconductor film, which is measured by secondary ion mass spectrometry, is lower than 5×

10¹⁹ atoms/cm³.

4. The semiconductor device according to claim 3,

wherein a hydrogen concentration in the oxide semiconductor film, which is measured by secondary ion mass spectrometry, is lower than 5×

10¹⁹ atoms/cm³.

5. The semiconductor device according to claim 3,

wherein a nitrogen concentration in the oxide semiconductor film, which is measured by secondary ion mass spectrometry, is lower than 5×

10¹⁹ atoms/cm³.

6. A method for manufacturing a semiconductor device comprising:

forming an oxide semiconductor film, a gate insulating film adjacent to the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,

wherein the oxide semiconductor film is formed by supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which a partial pressure of a gas having a mass-to-charge ratio of 44, which is measured with a quadrupole mass analyzer, is 3×

10<sup>−

5</sup> Pa or less, and performing a sputtering method in which power is applied to a target in the deposition chamber.

7. The method for manufacturing a semiconductor device, according to claim 6, wherein the gate electrode is formed over the oxide semiconductor film.

8. The method for manufacturing a semiconductor device, according to claim 6, wherein the oxide semiconductor film is formed over the gate electrode.

9. The method for manufacturing a semiconductor device, according to claim 6,

wherein a partial pressure of a gas having a mass-to-charge ratio of 18, which is measured with a quadrupole mass analyzer, is 3×

10<sup>−

5</sup> Pa or less in the deposition chamber.

10. The method for manufacturing a semiconductor device, according to claim 6,

wherein a partial pressure of a gas having a mass-to-charge ratio of 28, which is measured with a quadrupole mass analyzer, is 3×

10<sup>−

5</sup> Pa or less in the deposition chamber.

11. The method for manufacturing a semiconductor device according to claim 6,

wherein partial pressures of a gas having a mass-to-charge ratio of 18 and a gas having a mass-to-charge ratio of 28, which are measured with a quadrupole mass analyzer, are each 3×

10<sup>−

5</sup> Pa or less in the deposition chamber.

12. A method for manufacturing a semiconductor device, comprising:

forming a transistor including an oxide semiconductor film, a gate insulating film in contact with the oxide semiconductor film, and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween,

wherein the oxide semiconductor film is formed by supplying a gas containing one or more selected from the group consisting of a rare gas and oxygen into a deposition chamber in which a leakage rate of a gas having a mass-to-charge ratio of 44, which is measured with a quadrupole mass analyzer, is 3×

10<sup>−

6</sup> Pa·

m³/s or less, and performing a sputtering method in the deposition chamber.

13. The method for manufacturing a semiconductor device, according to claim 12,

wherein a leakage rate of a gas having a mass-to-charge ratio of 18, which is measured with a quadrupole mass analyzer, is 1×

10<sup>−

7</sup> Pa·

m³/s or less in the deposition chamber.

14. The method for manufacturing a semiconductor device, according to claim 12,

wherein a leakage rate of a gas having a mass-to-charge ratio of 28, which is measured with a quadrupole mass analyzer, is 1×

10<sup>−

5</sup> Pa·

m³/s or less in the deposition chamber.