DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR

  • US 20120305184A1
  • Filed: 04/25/2012
  • Published: 12/06/2012
  • Est. Priority Date: 05/31/2011
  • Status: Active Grant
First Claim
Patent Images

1. An ion etch chamber, comprising:

  • a chamber body enclosing a processing region;

    a substrate support disposed in the processing region and having a substrate receiving surface;

    a plasma source disposed at a wall of the chamber body facing the substrate receiving surface;

    an ion-radical shield disposed between the plasma source and the substrate receiving surface; and

    a movable aperture member between the ion-radical shield and the substrate receiving surface.

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