DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR
First Claim
1. An ion etch chamber, comprising:
- a chamber body enclosing a processing region;
a substrate support disposed in the processing region and having a substrate receiving surface;
a plasma source disposed at a wall of the chamber body facing the substrate receiving surface;
an ion-radical shield disposed between the plasma source and the substrate receiving surface; and
a movable aperture member between the ion-radical shield and the substrate receiving surface.
1 Assignment
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Accused Products
Abstract
Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
63 Citations
23 Claims
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1. An ion etch chamber, comprising:
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a chamber body enclosing a processing region; a substrate support disposed in the processing region and having a substrate receiving surface; a plasma source disposed at a wall of the chamber body facing the substrate receiving surface; an ion-radical shield disposed between the plasma source and the substrate receiving surface; and a movable aperture member between the ion-radical shield and the substrate receiving surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A chamber for plasma processing of semiconductor substrates, comprising:
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a substrate support; a plasma source opposite the substrate support; an ion filter disposed between the plasma source and the substrate support; a focus plate disposed between the ion filter and the substrate support, the focus plate coupled to a linear actuator; and an actuator operable to control elevation of the focus plate. - View Dependent Claims (15, 16, 17, 18)
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19. A plasma etch apparatus, comprising:
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a chamber; a plasma source disposed at one side of the chamber; a substrate support disposed opposite the plasma source, with a stage facing the plasma source; an ion-radical shield disposed between the plasma source and the substrate support, the ion-radical shield having a plurality of apertures formed in a region of the ion-radical shield aligned with the stage, the region of the ion-radical shield through which the apertures are formed having areal extent larger than the stage; and an aperture plate disposed between the ion-radical shield and the substrate support, the aperture plate having a central aperture substantially the same size as the region of the ion-radical shield through which apertures are formed, wherein the aperture plate is coupled to a linear actuator by a lift ring and a plurality of lift supports extending from the lift ring and contacting the aperture plate.
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- 20. An aperture member for a plasma etch chamber, the aperture member comprising a disk with an outer diameter of at least about six inches having an aperture formed through a central portion of the disk, the aperture having a rectangular shape and an inner wall contoured to support a second member in a substantially parallel relationship to the aperture member, and a plurality of openings formed in a peripheral portion of the disk, wherein the disk comprises quartz or ceramic.
Specification