MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film;
forming a film including a metal element so as to be in contact with the oxide semiconductor film;
performing a heat treatment in a state where the oxide semiconductor film is in contact with the film including the metal element, so that the metal element is added to the oxide semiconductor film from the film including the metal element; and
adding a dopant to the oxide semiconductor film through the film including the metal element,wherein low-resistance regions are formed in the oxide semiconductor film by the heat treatment and the addition of the dopant,wherein a channel formation region is between the low-resistance regions in the oxide semiconductor film,wherein the low-resistance regions have a resistance lower than a resistance of the channel formation region, andwherein the low-resistance regions include the metal element and the dopant.
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Accused Products
Abstract
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed.
82 Citations
26 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film; forming a film including a metal element so as to be in contact with the oxide semiconductor film; performing a heat treatment in a state where the oxide semiconductor film is in contact with the film including the metal element, so that the metal element is added to the oxide semiconductor film from the film including the metal element; and adding a dopant to the oxide semiconductor film through the film including the metal element, wherein low-resistance regions are formed in the oxide semiconductor film by the heat treatment and the addition of the dopant, wherein a channel formation region is between the low-resistance regions in the oxide semiconductor film, wherein the low-resistance regions have a resistance lower than a resistance of the channel formation region, and wherein the low-resistance regions include the metal element and the dopant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film; forming a stack of a gate insulating film and a gate electrode layer over the oxide semiconductor film; forming a film including a metal element to be in contact with part of the oxide semiconductor film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer; adding a dopant to the oxide semiconductor film through the film including the metal element with the gate insulating film and the gate electrode layer used as a mask; and heating the doped oxide semiconductor film and the film including the metal element to add the metal element to the oxide semiconductor film from the film including the metal element, so that low-resistance regions whose resistance is lower than a resistance of a channel formation region in the oxide semiconductor film are formed in the oxide semiconductor film, wherein the channel formation region overlaps with the gate electrode layer, wherein the low-resistance regions include the metal element and the dopant, and wherein the low-resistance regions are formed in the oxide semiconductor film so as to sandwich the channel formation region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film; forming a stack of a gate insulating film and a gate electrode layer over the oxide semiconductor film; forming a film including a metal element to be in contact with part of the oxide semiconductor film over the oxide semiconductor film, the gate insulating film, and the gate electrode layer; heating the oxide semiconductor film and the film including the metal element to add the metal element to the oxide semiconductor film from the film including the metal element; and adding a dopant to the oxide semiconductor film including the metal element through the film including the metal element with the gate insulating film and the gate electrode layer used as a mask, so that low-resistance regions whose resistance is lower than a resistance of a channel formation region in the oxide semiconductor film are formed in the oxide semiconductor film, wherein the channel formation region overlaps with the gate electrode layer, wherein the channel formation region is between the low-resistance regions, and wherein the low-resistance regions include the metal element and the dopant. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26)
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Specification