SLURRY, POLISHING LIQUID SET, POLISHING LIQUID, METHOD FOR POLISHING SUBSTRATE, AND SUBSTRATE

• US 20120329371A1
• Filed: 11/21/2011
• Published: 12/27/2012
• Est. Priority Date: 11/22/2010
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Hitachi Chemical Company Limited (Resonac Holdings Corp.)
• Inventors: Iwano, Tomohiro
• Granted Patent: US 9,881,801 B2
• Time in Patent Office: Days
• US Class Current: 451/56
• CPC Class Codes: B24B 37/044 characterised by the composition of the lapping agent
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 13/12 containing heavy metal salts in an amount of at least 50% of the non-solvent components
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

The polishing liquid according to the embodiment comprises abrasive grains, an additive and water, wherein the abrasive grains include a tetravalent metal element hydroxide, and produce a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×10⁵ G.

Claims

1. A slurry comprising abrasive grains and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G,

wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

3. The slurry according to claim 1, wherein the abrasive grains produce absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

4. The slurry according to claim 1, wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

5. The slurry according to claim 1, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

6. The slurry according to claim 1, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

7. The slurry according to claim 1, wherein the tetravalent metal element is tetravalent cerium.

8. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid, wherein the first liquid is the slurry according to claim 1, and the second liquid comprises an additive and water.

9. The polishing liquid set according to claim 8, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

10. The polishing liquid set according to claim 8, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

20. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 1 between the abrasive pad and the film to be polished.

21. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,

a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 8 to obtain the polishing liquid, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

22. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and second liquid of the polishing liquid set according to claim 8 between the abrasive pad and the film to be polished.

24. The polishing method according to claim 20, wherein the film to be polished includes silicon oxide.

25. The polishing method according to claim 20, wherein a surface of the film to be polished has irregularities.

27. The polishing method according to claim 21, wherein the film to be polished includes silicon oxide.

28. The polishing method according to claim 22, wherein the film to be polished includes silicon oxide.

30. The polishing method according to claim 21, wherein a surface of the film to be polished has irregularities.

31. The polishing method according to claim 22, wherein a surface of the film to be polished has irregularities.

2. (canceled)

11. A polishing liquid comprising abrasive grains, an additive and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G, and

wherein the abrasive grains produce absorbance of at least 1.50 for light with a wavelength of 400 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

13. The polishing liquid according to claim 11, wherein the abrasive grains produce absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

14. The polishing liquid according to claim 11, wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

15. The polishing liquid according to claim 11, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

16. The polishing liquid according to claim 11, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

17. The polishing liquid according to claim 11, wherein the tetravalent metal element is tetravalent cerium.

18. The polishing liquid according to claim 11, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

19. The polishing liquid according to claim 11, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

23. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 11 between the abrasive pad and the film to be polished.

29. The polishing method according to claim 23, wherein the film to be polished includes silicon oxide.

32. The polishing method according to claim 23, wherein a surface of the film to be polished has irregularities.

12. (canceled)

26. (canceled)

33. A slurry comprising abrasive grains and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G,

the abrasive grains producing absorbance of at least 1.000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

34. The slurry according to claim 33, wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

35. The slurry according to claim 33, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

36. The slurry according to claim 33, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

37. The slurry according to claim 33, wherein the tetravalent metal element is tetravalent cerium.

38. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid, wherein the first liquid is the slurry according to claim 33, and the second liquid comprises an additive and water.

39. The polishing liquid set according to claim 38, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

40. The polishing liquid set according to claim 38, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

48. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 33 between the abrasive pad and the film to be polished.

49. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,

a step of mixing the first liquid and second liquid of the polishing liquid set to claim 38 to obtain the polishing liquid, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

50. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and second liquid of the polishing liquid set according to claim 38 between the abrasive pad and the film to be polished.

52. The polishing method according to claim 48, wherein the film to be polished includes silicon oxide.

53. The polishing method according to claim 49, wherein the film to be polished includes silicon oxide.

54. The polishing method according to claim 50, wherein the film to be polished includes silicon oxide.

56. The polishing method according to claim 48, wherein a surface of the film to be polished has irregularities.

57. The polishing method according to claim 49, wherein a surface of the film to be polished has irregularities.

58. The polishing method according to claim 50, wherein a surface of the film to be polished has irregularities.

41. A polishing liquid comprising abrasive grains, an additive and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G,

the abrasive grains producing absorbance of at least 1,000 for light with a wavelength of 290 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

42. The polishing liquid according to claim 41, wherein the abrasive grains produce absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

43. The polishing liquid according to claim 41, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

44. The polishing liquid according to claim 41, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

45. The polishing liquid according to claim 41, wherein the tetravalent metal element is tetravalent cerium.

46. The polishing liquid according to claim 41, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

47. The polishing liquid according to claim 41, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

51. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 41 between the abrasive pad and the film to be polished.

55. The polishing method according to claim 51, wherein the film to be polished includes silicon oxide.

59. The polishing method according to claim 51, wherein a surface of the film to be polished has irregularities.

60. A slurry comprising abrasive grains and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G,

the abrasive grains producing absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

61. The slurry according to claim 60, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

62. The slurry according to claim 60, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

63. The slurry according to claim 60, wherein the tetravalent metal element is tetravalent cerium.

64. A polishing liquid set comprising constituent components of a polishing liquid separately stored as a first liquid and a second liquid, so that the first liquid and second liquid are mixed to form the polishing liquid, wherein the first liquid is the slurry according to claim 60, and the second liquid comprises an additive and water.

65. The polishing liquid set according to claim 64, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

66. The polishing liquid set according to claim 64, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

73. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the slurry according to claim 60 between the abrasive pad and the film to be polished.

74. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad,

a step of mixing the first liquid and second liquid of the polishing liquid set according to claim 64 to obtain the polishing liquid, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid between the abrasive pad and the film to be polished.

75. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while respectively supplying both the first liquid and second liquid of the polishing liquid set according to claim 64 between the abrasive pad and the film to be polished.

77. The polishing method according to claim 73, wherein the film to be polished includes silicon oxide.

78. The polishing method according to claim 74, wherein the film to be polished includes silicon oxide.

79. The polishing method according to claim 75, wherein the film to be polished includes silicon oxide.

81. The polishing method according to claim 73, wherein a surface of the film to be polished has irregularities.

82. The polishing method according to claim 74, wherein a surface of the film to be polished has irregularities.

83. The polishing method according to claim 75, wherein a surface of the film to be polished has irregularities.

67. A polishing liquid comprising abrasive grains, an additive and water,

the abrasive grains including a tetravalent metal element hydroxide, and producing a liquid phase with a nonvolatile content of 500 ppm or greater when an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass % has been centrifuged for 50 minutes at a centrifugal acceleration of 1.59×

10⁵ G,

the abrasive grains producing absorbance of not greater than 0.010 for light with a wavelength of 450-600 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 0.0065 mass %.

68. The polishing liquid according to claim 67, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion with a content of the abrasive grains adjusted to 1.0 mass %.

69. The polishing liquid according to claim 67, wherein the tetravalent metal element hydroxide is obtained by mixing a tetravalent metal element salt and an alkali solution.

70. The polishing liquid according to claim 67, wherein the tetravalent metal element is tetravalent cerium.

71. The polishing liquid according to claim 67, wherein the additive is at least one selected from the group consisting of vinyl alcohol polymers and derivatives of the vinyl alcohol polymers.

72. The polishing liquid according to claim 67, wherein a content of the additive is 0.01 mass % or greater based on a total mass of the polishing liquid.

76. A substrate polishing method comprising:

a step of placing a film to be polished, of a substrate which has the film to be polished on its surface, so as to face an abrasive pad, and

a step of polishing at least a portion of the film to be polished while supplying the polishing liquid according to claim 67 between the abrasive pad and the film to be polished.

80. The polishing method according to claim 76, wherein the film to be polished includes silicon oxide.

84. The polishing method according to claim 76, wherein a surface of the film to be polished has irregularities.