Apparatus and Method of Wafer Bonding Using Compatible Alloy

• US 20130023082A1
• Filed: 09/20/2012
• Published: 01/24/2013
• Est. Priority Date: 09/10/2008
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Tsau, Christine H., Frey, Timothy J., Judy, Michael W., Martin, John R.
• Granted Patent: US 8,956,904 B2
• Time in Patent Office: Days
• US Class Current: 438/51
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 24/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/1461 MEMS

Abstract

A method of forming a MEMS device provides first and second wafers, where at least one of the first and second wafers has a two-dimensional array of MEMS devices. The method deposits a layer of first germanium onto the first wafer, and a layer of aluminum-germanium alloy onto the second wafer. To deposit the alloy, the method deposits a layer of aluminum onto the second wafer and then a layer of second germanium to the second wafer. Specifically, the layer of second germanium is deposited on the layer of aluminum. Next, the method brings the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium. The wafers then are heated when the first and second germanium are in contact, and cooled to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices.

Claims

1. A method of forming a MEMS device, the method comprising,

providing a first wafer;

providing a second wafer, at least one of the first and second wafers having a two-dimensional array of MEMS devices;

depositing a layer of first germanium onto the first wafer;

depositing a layer of aluminum onto the second wafer;

depositing a layer of second germanium onto the second wafer, the layer of second germanium being deposited on the layer of aluminum,

bringing the first wafer into contact with the second wafer so that the first germanium contacts the second germanium;

heating the first and second wafers when the first and second germanium are in contact; and

cooling the wafers to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices, the seal rings bonding the first wafer to the second wafer.

2. The method as defined by claim 1 further comprising dicing the wafers to form a plurality of individual, hermetically sealed MEMS devices.

3. The method as defined by claim 1 wherein heating comprises heating the first and second wafer within about 75 degrees C. of the metal alloy eutectic temperature between the first wafer and the second wafer.

4. The method as defined by claim 1 wherein the aluminum and second germanium form an alloy before bringing the first wafer into contact with the second wafer.

5. The method as defined by claim 1 wherein at least one of the seal rings has varying concentrations of aluminum, germanium, or aluminum/germanium eutectic, the region of the seal ring adjacent to the second wafer having a higher concentration of aluminum than the region of the seal ring adjacent to the first wafer, the region of the seal ring adjacent to the first wafer having a higher concentration of germanium than the region of the seal ring adjacent to the second wafer.

6. The method as defined by claim 1 wherein depositing an aluminum layer comprises using sputter deposition processes to form the aluminum layer on the second wafer.

7. The method as defined by claim 1 wherein the first wafer comprises a two dimensional array of MEMS inertial sensors, the second wafer comprising a corresponding two-dimensional array of caps.

8. The method as defined by claim 7 wherein the caps comprise circuitry.

9. The method as defined by claim 1 wherein the array of MEMS devices comprise an array of MEMS inertial sensors.

10. The method as defined by claim 1 further comprising adding rare earth metal to at least one of the first and second wafers, the seal rings comprising the rare earth metal.

11. The method as defined by claim 1 wherein at least two of the seal rings have a width of between about 5-60 microns.

12. The method as defined by claim 1 further comprising applying a barrier layer to second wafer to facilitate adherence of the aluminum to the second wafer, the barrier layer being between the aluminum and the second wafer.

13. A method of forming a MEMS device, the method comprising,

providing a cap wafer having a two-dimensional array of caps having circuitry;

providing a device wafer having a two-dimensional array of MEMS devices;

depositing a layer of first germanium onto the cap wafer;

depositing a layer of aluminum onto the device wafer;

depositing a layer of second germanium to the device wafer, the layer of second germanium being deposited on the layer of aluminum;

bringing the cap wafer into contact with the device wafer so that the first germanium contacts the second germanium;

heating the cap and device wafers when the first and second germanium are in contact; and

cooling the wafers to form a plurality of conductive hermetic seal rings circumscribed about the plurality of the MEMS devices, the seal rings bonding the cap wafer to the device wafer.

14. The method as defined by claim 13 further comprising dicing the wafers to form a plurality of individual, hermetically sealed MEMS devices.

15. The method as defined by claim 13 wherein heating comprises heating the first and second wafer within about 75 degrees C. of the metal alloy eutectic temperature between the first wafer and the second wafer.

16. The method as defined by claim 13 wherein the aluminum and second germanium form an alloy before bringing the first wafer into contact with the second wafer.

17. A method of forming a MEMS device, the method comprising,

providing a first wafer;

providing a second wafer, at least one of the first and second wafers having a two-dimensional array of MEMS devices;

depositing a layer of first germanium onto the first wafer;

depositing a layer of aluminum-germanium alloy onto the second wafer by depositing a layer of aluminum onto the second wafer and then depositing a layer of second germanium to the second wafer, the layer of second germanium being deposited on the layer of aluminum;

bringing the first wafer into contact with the second wafer so that the first germanium in the aluminum-germanium alloy contacts the second germanium;

heating the first and second wafers when the first and second germanium are in contact; and

cooling the wafers to form a plurality of conductive hermetic seal rings about the plurality of the MEMS devices, the seal rings bonding the first wafer to the second wafer.

18. The method as defined by claim 17 further comprising dicing the wafers to form a plurality of individual, hermetically sealed MEMS devices.

19. The method as defined by claim 17 wherein the first wafer comprises a two dimensional array of caps with circuitry, the second wafer comprising the two-dimensional array of MEMS devices.

20. The method as defined by claim 17 wherein the second wafer comprises a two-dimensional array of caps with circuitry, the first wafer comprising the two-dimensional array of MEMS devices.

21. The method as defined by claim 17 further comprising heating the deposited aluminum and deposited germanium on the second wafer before bringing the first wafer into contact with the second wafer.