SEMICONDUCTOR DEVICE, THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY APPARATUS

• US 20130048998A1
• Filed: 03/02/2011
• Published: 02/28/2013
• Est. Priority Date: 05/31/2010
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Katoh, Sumio
• Granted Patent: US 9,123,820 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device (S_T) includes a substrate (11), a gate electrode (12b), a gate insulating film (13b), an oxide semiconductor film (14b) including a channel part (14bc) formed in a position facing the gate electrode (12b), a source electrode (15bs), and a drain electrode (15bd). The source electrode (15bs) and the drain electrode (15bd) is arranged so as not to overlap with the gate electrode (12b) as viewed in the plane. A region adjacent to the gate electrode (12b) and the source electrode (15bs) and a region adjacent to the gate electrode (12b) and the drain electrode (15bd) are, in a region where the source electrode (15bs) and the drain electrode (15bd) does not overlap with the gate electrode (12b), processed such that resistance in a region of the oxide semiconductor film (14b) including a surface thereof is reduced.

Claims

1. A semiconductor device, comprising:

a substrate;

a gate electrode provided on the substrate;

a gate insulating film provided so as to cover the gate electrode;

an oxide semiconductor film provided on the gate insulating film and including a channel part formed in a position facing the gate electrode; and

a source electrode and a drain electrode provided apart from each other on the oxide semiconductor film with the channel part being interposed between the source electrode and the drain electrode,

wherein at least one of the source electrode and the drain electrode is arranged so as not to overlap with the gate electrode as viewed in plane, and

a region adjacent to the gate electrode and the source electrode and a region adjacent to the gate electrode and the drain electrode are, in a region where the at least one of the source electrode and the drain electrode does not overlap with the gate electrode, processed for resistance reduction in a region of the oxide semiconductor film including a surface thereof.

2. The semiconductor device of claim 1, wherein

sheet resistance in the region of the oxide semiconductor film where the resistance is reduced is 10 Ω

/sq-100 kΩ

/sq.

3. The semiconductor device of claim 1, wherein

the channel part has a channel width of equal to or less than 50 μ

m.

4. The semiconductor device of claim 1, wherein

the oxide semiconductor film is made of metal oxide containing at least one selected from a group consisting of indium (In), gallium (Ga), and zinc (Zn).

5. The semiconductor device of claim 4, wherein

the oxide semiconductor film is made of In—

Ga—

Zn—

O metal oxide.

6. A thin film transistor substrate, comprising:

a thin film transistor provided on a substrate body,

wherein the thin film transistor is the semiconductor device of claim 1.

7. The thin film transistor substrate of claim 6, wherein

the semiconductor device is provided at a last stage of a buffer circuit of a gate driver region.

8. A display apparatus, comprising:

the thin film transistor substrate of claim 6;

a counter substrate arranged so as to face the thin film transistor substrate; and

a display medium layer provided between the thin film transistor substrate and the counter substrate.

9. The display apparatus of claim 8, wherein

the display medium layer is a liquid crystal layer.