TRENCH TRANSISTOR
First Claim
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1. A method of forming a device comprising:
- providing a substrate defined with a device region;
forming a buried doped region in the substrate in the device region;
forming a trench having upper and lower portions of different widths in the substrate in the device region;
forming a gate in the upper portion of the trench in the substrate in the device region, wherein a channel of the device is disposed on a sidewall of the upper portion of the trench, the buried doped region is disposed below the gate, wherein a distance from the buried doped region to the channel is a drift length LD of the device; and
forming a surface doped region adjacent to the gate.
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Abstract
A method of forming a device is disclosed. A substrate defined with a device region is provided. A buried doped region is formed in the substrate in the device region. A gate is formed in a trench in the substrate in the device region. A channel of the device is disposed on a sidewall of the trench. The buried doped region is disposed below the gate. A distance from the buried doped region to the channel is a drift length LD of the device. A surface doped region is formed adjacent to the gate.
15 Citations
20 Claims
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1. A method of forming a device comprising:
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providing a substrate defined with a device region; forming a buried doped region in the substrate in the device region; forming a trench having upper and lower portions of different widths in the substrate in the device region; forming a gate in the upper portion of the trench in the substrate in the device region, wherein a channel of the device is disposed on a sidewall of the upper portion of the trench, the buried doped region is disposed below the gate, wherein a distance from the buried doped region to the channel is a drift length LD of the device; and forming a surface doped region adjacent to the gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a device comprising:
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providing a substrate defined with a device region; providing first and second device doped wells in the device region, wherein the first device doped well has a depth greater than the second device doped well; forming a buried doped region in the first device doped well; forming a trench having upper and lower portions of different widths in the substrate in the device region; forming a gate in the upper portion of the trench in the substrate in the device region, wherein a channel of the device is disposed on a sidewall of the upper portion of the trench, the buried doped region is disposed below the gate, wherein a distance from the buried doped region to the channel is a drift length LD of the device; and forming a surface doped region adjacent to the gate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method of forming a device comprising:
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providing a substrate defined with a device region; forming a buried doped region in the substrate in the device region; forming a first trench in the substrate in the device region; forming a second trench in the first trench, wherein the second trench has a depth deeper than the first trench; forming a gate in the first trench in the substrate in the device region, wherein a channel of the device is disposed on a sidewall of the first trench, the buried doped region is disposed below the gate, wherein a distance from the buried doped region to the channel is a drift length LD of the device; and forming a surface doped region adjacent to the gate.
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Specification