APPARATUS HAVING A BACK-BIAS MAGNET AND A SEMICONDUCTOR CHIP ELEMENT

• US 20130082340A1
• Filed: 09/28/2012
• Published: 04/04/2013
• Est. Priority Date: 09/30/2011
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Elian, Klaus, Ernst, Georg, Theuss, Horst
• Granted Patent: US 9,164,156 B2
• Time in Patent Office: Days
• US Class Current: 257/422
• CPC Class Codes: G01D 5/147 influenced by the movement of a third element, the position of Hall device and the source of magnetic field being fixed in respect to each other
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices
• CPC Class Codes: G01R 33/072 Constructional adaptation of the sensor to specific applications
• CPC Class Codes: G01R 33/091 Constructional adaptation of the sensor to specific applications

Abstract

An apparatus may include a back-bias magnet; and a semiconductor chip element; wherein the semiconductor chip element has a sensor for measuring a magnetic field strength; and wherein a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element and wherein the contact side of the semiconductor chip element has one or more structures such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.

Claims

1. An apparatus, comprising

a back-bias magnet;

a semiconductor chip element;

wherein the semiconductor chip element has a sensor for measuring a magnetic field strength; and

wherein a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element and wherein the contact side of the semiconductor chip element has one or more structures such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.

2. The apparatus as claimed in claim 1,

wherein the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element and the semiconductor chip element and the back-bias magnet are thereby fixedly connected to each other at the contact surface.

3. The apparatus as claimed in claim 1,

wherein the structures of the semiconductor chip element are formed by etching.

4. The apparatus as claimed in claim 1,

wherein the back-bias magnet has a magnetized material.

5. The apparatus as claimed in claim 1,

wherein magnetic field lines generated by the back-bias magnet are settable by shaping the structures of the semiconductor chip element.

6. The apparatus as claimed in claim 4,

wherein the magnetizable material has at least one of the following:

permanent-magnetic particles;

soft magnetic particles; and

hard magnetic particles.

7. The apparatus as claimed in claim 1, further comprising:

contact elements in electrical connection with the semiconductor chip element.

8. The apparatus as claimed in claim 7,

wherein the semiconductor chip element is contacted using wire bonds or solder beads.

9. The apparatus as claimed in claim 1,

wherein the sensor comprises at least one of

a GMR sensor;

a Hall sensor;

a magnetic resistance;

a giant magnetic resistance; and

an anisotropic magnetic resistance.

10. The apparatus as claimed in claim 1, further comprising:

a magnetic lens configured to amplify the magnetic field lines generated by the back-bias magnet.

11. A method for producing an apparatus, the method comprising:

providing a semiconductor chip element, wherein the semiconductor chip element comprises a sensor for measuring a magnetic field strength; and

forming one or more structures on a contact side of the semiconductor chip element; and

generating a back-bias magnet such that a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.

12. The method as claimed in claim 11,

wherein the generating the back-bias magnet comprises the injection of compound onto the contact side of the semiconductor chip element.

13. The method as claimed in claim 11, further comprising:

singulating the semiconductor chip element.

14. The method as claimed in claim 11, further comprising:

producing the one or more structures by removing material on a contact side of the semiconductor chip element.

15. The method as claimed in claim 11,

wherein a structure for defining the singulation is formed at least partially by the one or more structures on the contact side of the semiconductor chip element.

16. The method as claimed in claim 14,

wherein, together with the removal of material, a further structure for defining a singulation edge is produced.

17. The method as claimed in claim 11,

wherein a magnetic lens is arranged in the semiconductor chip element between the sensor and the one or more structures.