SPUTTER DEPOSITION APPARATUS

• US 20130092533A1
• Filed: 11/29/2012
• Published: 04/18/2013
• Est. Priority Date: 06/03/2010
• Status: Abandoned Application

• Current Assignee: Ulvac Incorporated
• Original Assignee: Ulvac Incorporated
• Inventors: OHNO, Tetsuhiro, SATO, Shigemitsu, SUDA, Tomokazu, ISOBE, Tatsunori
• Application Number:
  US13/688,753
• Publication Number:
  US 20130092533A1
• Time in Patent Office: Days
• US Class Current: 204/298.12
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: H01J 37/3417 Arrangements
• CPC Class Codes: H01J 37/3435 Target holders (includes backing plates and endblocks)
• CPC Class Codes: H01J 37/345 Magnet arrangements in particular for cathodic sputtering apparatus material of magnets or magnets in general H01F1/00, H01F7/00
• CPC Class Codes: H01J 37/3464 Operating strategies
• CPC Class Codes: H01J 37/347 Thickness uniformity of coated layers or desired profile of target erosion

Abstract

A sputter deposition apparatus can sputter a wider surface area of a sputtering surface of a target in comparison to an area that could be sputtered by a conventional apparatus. An adhesion-preventing member surrounding the outer periphery of a sputtering surface of a target made of a metal material is formed by insulating ceramic. The target is sputtered while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes out to the outside of the outer periphery of the sputtering surface.

Claims

1. A sputter deposition apparatus, comprising:

a vacuum chamber;

a vacuum evacuation device evacuating the inside of the vacuum chamber;

a gas introduction system introducing a sputtering gas into the vacuum chamber;

a target having a sputtering surface to be sputtered which is exposed inside the vacuum chamber;

a magnet device arranged on a rear side of the sputtering surface of the target and movable relative to the target; and

a power source device applying a voltage to the target,

wherein the magnet device has a center magnet disposed with an orientation to generate a magnetic field on the sputtering surface and an outer peripheral magnet disposed in a continuous shape on a periphery of the center magnet,

wherein the center magnet and the outer peripheral magnet are disposed in such a manner that the magnetic poles of reverse polarities thereof are oriented toward the sputtering surface,

the sputter deposition apparatus, further comprising;

an adhesion-preventing member made of insulating ceramic disposed at an end of the target,

wherein a surface including the sputtering surface among the surface of the target is discontinuous, so as to surround a periphery of the sputtering surface, and

wherein the magnet device moves between a position where the entire outer periphery of the outer peripheral magnet is on the inside of the inner periphery of the adhesion-preventing member surrounding the periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes to the outer periphery side beyond the inner periphery of the adhesion-preventing member surrounding the periphery of the sputtering surface.

2. The sputter deposition apparatus according to claim 1, further comprising:

a plurality of pairs of the target and the magnet device disposed on the underside of the sputtering surface of the target,

wherein the plurality of targets are arranged in a line spaced apart from each other, the sputtering surfaces being oriented toward an object to be film-formed carried into the vacuum chamber, and

wherein the power source device applies a voltage to at least one of the plurality of targets.

3. The sputter deposition apparatus according to claim 1, wherein the target is a cylindrical shape having the sputtering surface which is a curved surface, and

wherein the magnet device moves parallel to the longitudinal direction of the target.

4. The sputter deposition apparatus according to claim 2, wherein the target is a cylindrical shape having the sputtering surface which is a curved surface, and

wherein the magnet device moves parallel to the longitudinal direction of the target.

5. The sputter deposition apparatus according to claim 2, wherein the magnet device disposed on the rear side of the sputtering surface of at least one of the targets moves between a position where the entire outer periphery of the outer peripheral magnet is on the inside of the inner periphery of the adhesion-preventing member surrounding the periphery of the sputtering surface of the target and another position where a part of the outer periphery of the outer peripheral magnet protrudes out between the outside of the inner periphery of the adhesion-preventing member of the target and the inner periphery of the adhesion-preventing member surrounding the periphery of the sputtering surface of another target adjacent to the target.