IMPLANT HAVING THREE-DIMENSIONAL SHAPE FOR ELECTRICALLY STIMULATING A NERVE STRUCTURE

• US 20130096660A1
• Filed: 04/29/2011
• Published: 04/18/2013
• Est. Priority Date: 04/30/2010
• Status: Active Grant

• Current Assignee: University Pierre et Marie Curie
• Original Assignee: University Pierre et Marie Curie
• Inventors: Yvert, Blaise, Bergonzo, Philippe, Rousseau, Lionel, Benosman, Ryad Benjamin, Picaud, Serge, Sahel, Jose, Lissorgues, Gaelle, Ieng, Siohoi, Lorach, Henri, Djilas, Milan
• Granted Patent: US 8,774,938 B2
• Time in Patent Office: Days
• US Class Current: 607/116
• CPC Class Codes: A61N 1/025 Digital circuitry features of electrotherapy devices, e.g. memory, clocks, processors
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/0553 Paddle shaped electrodes, e.g. for laminotomy
• CPC Class Codes: A61N 1/37205 Microstimulators, e.g. implantable through a cannula

Abstract

The invention relates to an implant which includes, in order to electrically stimulate a nerve structure, in particular the retina, an electrically insulating substrate (1), a array of recesses (2) formed in an upper surface of the substrate, stimulation electrodes (3) arranged at the bottom of the recesses, and an electrically conductive layer forming a ground plane (4) at the upper portion of the recesses. The sizes of the recesses and of the electrodes of the implant are such that the spatial selectivity of the stimulation current applied to the nerve structure is maximized

Claims

1. Implant for electrical stimulation of a nerve structure comprising:

an electrically insulating substrate;

a array of cavities formed in an upper surface of the substrate;

stimulation electrodes, each arranged at a bottom portion of one of the cavities; and

an electrically conductive layer forming a ground plane at an upper portion of the cavities.

2. Implant according to claim 1, wherein each cavity has a flared shape that expands from the bottom portion of the cavity toward the upper surface of the substrate.

3. Implant according to claim 1, wherein the cavities have a depth greater than 15 μ

m.

4. Implant according to claim 1, wherein the cavities have a depth lower than 50 μ

m.

5. Implant according to claim 1, wherein the cavities have a depth of between 25 and 35 μ

m.

6. Implant according to claim 1, wherein each stimulation electrode has, on a bottom surface of its respective cavity, a dimension of less than 60 μ

m.

7. Implant according to claim 1, wherein each cavity has an insulating bottom surface partially covered with a stimulation electrode.

8. Implant according to claim 1, wherein each stimulation electrode has a central part extending over a bottom surface of its respective cavity and a peripheral part overlapping the lateral walls of said cavity.

9. Implant according to claim 8, wherein said central part of the stimulation electrode has a dimension of less than 40 μ

m.

10. Implant according to claim 1, wherein the electrically conductive layer forming the ground plane comprises, for each cavity of the network, a part overlapping the lateral walls of said cavity.