Method of fabricating semiconductor substrate and method of fabricating light emitting device

• US 20130109121A1
• Filed: 10/25/2012
• Published: 05/02/2013
• Est. Priority Date: 08/26/2009
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Chang Youn, Sakai, Shiro, Kim, Hwa Mok, Lee, Joon Hee, Moon, Soo Young, Kim, Kyoung Wan
• Granted Patent: US 8,609,449 B2
• Time in Patent Office: Days
• US Class Current: 438/47
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate

Abstract

The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Claims

1. A method of fabricating a light emitting device, the method comprising:

a preparing a plurality of substrate growth chambers;

second preparing a substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer in a first growth chamber; and

growing a second nitride semiconductor layer in a second growth chamber,

wherein solution the second nitride semiconductor layer is disposed on the first nitride layer.

2. The method of claim 1, wherein the first chamber is connected to the second chamber via a communication path.

3. The method of claim 2, wherein a shutter is disposed between the communication path and the first chamber or the second chamber.

4. The method of claim 3, wherein the substrate is transferred from the first chamber to the second chamber while remaining under vacuum.

5. The method of claim 4, wherein the growth of the second nitride semiconductor layer further comprises growing an active layer.

6. The method of claim 5, wherein the second nitride semiconductor layer comprises a different material than the first nitride semiconductor layer.

7. The method of claim 6, wherein the growth of the first nitride semiconductor layer produces reaction by-products different from the growth of the second nitride semiconductor layer.

8. The method of claim 7, wherein the first nitride semiconductor layer comprises a GaN layer having a thickness of about 2 μ

m.

9. The method of claim 8,

wherein the growth of the first nitride semiconductor layer contaminates the first growth chamber.

10. The method of claim 7, wherein the second growth chamber is for a metal organic chemical vapor deposition chamber.

11. The method of claim 7, further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

12. The method of claim 11, wherein the patterned layer comprises a plurality of voids.

13. The method of claim 12, further comprising infiltrating a chemical etchant into the voids.

14. The method of claim 13, further comprising separating the substrate from one of the nitride semiconductor layers.

15. A method of fabricating a light emitting device, the method comprising:

preparing a plurality of growth chambers;

preparing a first substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer in a first growth chamber;

growing a second nitride semiconductor layer in a second growth chamber;

attaching a second substrate on the second nitride semiconductor layer; and

separating the first substrate from one of the nitride semiconductor layers,

wherein the second nitride semiconductor layer is disposed on the first nitride layer.

16. The method of claim 15, further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

17. The method of claim 16, wherein the patterned layer comprises a plurality of voids.

18. The method of claim 17, wherein the separation of the first substrate comprises infiltrating a chemical etchant into the voids.

19. The method of claim 15, wherein a shutter and a communication path are disposed between the first chamber and the second chamber.

20. The method of claim 19, wherein the substrate is transferred from the first chamber to the second chamber while remaining under vacuum.