INTEGRATING ACTIVE MATRIX INORGANIC LIGHT EMITTING DIODES FOR DISPLAY DEVICES

• US 20130126890A1
• Filed: 11/23/2011
• Published: 05/23/2013
• Est. Priority Date: 11/23/2011
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Bedell, Stephen W., Sadana, Devendra K., Shahidi, Ghavam G., Shahrjerdi, Davood, Hekmatshoartabari, Bahman
• Granted Patent: US 8,912,020 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A method of forming an active matrix, light emitting diode (LED) array includes removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.

Claims

1. A method of forming an active matrix, light emitting diode (LED) array, the method comprising:

removing, from a base substrate, a layer of inorganic LED material originally grown thereupon; and

bonding the removed layer of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array.

2. The method of claim 1, wherein removing the layer of inorganic LED material from the base substrate comprises:

forming one or more stress layers on a top surface of the inorganic LED material, opposite the base substrate;

forming a flexible handle layer on the one or more stress layers; and

applying force to the flexible handle layer so as to separate the stress layer and at least a portion of inorganic LED material from the base substrate.

3. The method of claim 2, further comprising forming an adhesion layer that forms an interface between the inorganic LED material and the one or more stress layers.

4. The method of claim 2, wherein the one or more stress layers comprise metal.

5. The method of claim 2, wherein the flexible handle layer comprises a polyimide material.

6. The method of claim 2 wherein a thickness of the one or more stress layers is selected so as exfoliate the inorganic LED material from the base substrate at a desired location with respect to thickness of the exfoliated inorganic LED material.

7. The method of claim 1, wherein the inorganic LED material is bonded to the active matrix, TFT backplane array by cold welding.

8. The method of claim 1, further comprising pattering the inorganic LED material bonded to the active matrix, TFT backplane array, and repeating the removing, and bonding with additional removed layers of inorganic LED material of a different type so as to form adjacent subpixel units having different light emission characteristics.

9. The method of claim 1, further comprising forming a plurality of color filters on at least one of a top and bottom surface of the active matrix LED array.

10. The method of claim 1, wherein the inorganic LED material comprises gallium nitride (GaN) and the base substrate comprises sapphire.

11. A method of forming a display device, the method comprising:

growing one or more layers of inorganic light emitting diode (LED) material on a base substrate;

separating the one or more layers of the inorganic LED material from the base substrate by a stress-induced spalling technique; and

bonding the separated one or more layers of inorganic LED material to an active matrix, thin film transistor (TFT) backplane array, thereby defining an active matrix LED array.

12. The method of claim 11, wherein the stress-induced spalling technique comprises:

forming one or more stress layers on a top surface of the inorganic LED material, opposite the base substrate;

forming a flexible handle layer on the one or more stress layers; and

applying force to the flexible handle layer so as to separate the stress layer and at least a portion of inorganic LED material from the base substrate.

13. The method of claim 12, further comprising forming an adhesion layer that forms an interface between the inorganic LED material and the one or more stress layers.

14. The method of claim 12, wherein the one or more stress layers comprise metal.

15. The method of claim 12, wherein the flexible handle layer comprises a polyimide material.

16. The method of claim 12 wherein a thickness of the one or more stress layers is selected so as exfoliate the inorganic LED material from the base substrate at a desired location with respect to thickness of the exfoliated inorganic LED material.

17. The method of claim 11, wherein the inorganic LED material is bonded to the active matrix, TFT backplane array by cold welding.

18. The method of claim 11, further comprising pattering the inorganic LED material bonded to the active matrix, TFT backplane array, and repeating the removing, and bonding with additional removed layers of inorganic LED material of a different type so as to form adjacent subpixel units having different light emission characteristics.

19. The method of claim 11, further comprising forming a plurality of color filters on at least one of a top and bottom surface of the active matrix LED array.

20. The method of claim 11, wherein the inorganic LED material comprises gallium nitride (GaN) and the base substrate comprises sapphire.

21. An active matrix, light emitting diode (LED) array, comprising:

a layer of inorganic LED material bonded to an active matrix, thin film transistor (TFT) backplane array.

22. The array of claim 21, further comprising a plurality of patterned layers of inorganic LED material of a different type bonded to the TFT backplane array so as to form adjacent subpixel units having different light emission characteristics.

23. The array of claim 21, further comprising a plurality of color filters formed on at least one of a top and bottom surface of the active matrix LED array.

24. The array of claim 21, wherein the inorganic LED material comprises gallium nitride (GaN).