METHOD FOR PRODUCING A GRAPHENE SHEET ON A PLATINUM SILICIDE, STRUCTURES OBTAINED USING SAID METHOD AND USES THEREOF
First Claim
1. A method for producing a graphene sheet on a platinum silicide of formula PtxSi, wherein x is a number greater than or equal to two, comprising:
- a) producing a stack by;
i) depositing a layer C1 of a diffusion barrier material on a substrate;
ii) depositing, on the layer C1, a layer C2 of a carbon-containing material comprising silicon;
iii) depositing, on the layer C2, a layer C3 of platinum; and
b) heat-treating the stack obtained at a);
and wherein the ratio of the number of platinum atoms found in the layer C3 with respect to the number of silicon atoms found in the layer C2 is greater than or equal to two.
1 Assignment
0 Petitions
Accused Products
Abstract
The invention relates to a method for producing a graphene sheet on a platinum silicide, wherein the platinum silicide is in the form of a layer or a plurality of pins.
This method comprises:
a) producing a stack by (i) depositing a layer C1 of a diffusion barrier material on a substrate; (ii) depositing, on the layer C1, a layer C2 of a carbon-containing material, wherein said carbon-containing material optionally comprises silicon; (iii) depositing, on the layer C2, a layer C3 of platinum; (iv) depositing a layer C4 of a material of formula SiaCbHc on the layer C3 if the carbon-containing material of the layer C2 is free from silicon; and
b) heat-treating the stack obtained at step a).
It also relates to structures obtained using this method and the uses of these structures.
Applications: manufacture of micro- and nanoelectronic devices, micro- and nanoelectromechanical devices, etc.
22 Citations
27 Claims
-
1. A method for producing a graphene sheet on a platinum silicide of formula PtxSi, wherein x is a number greater than or equal to two, comprising:
-
a) producing a stack by; i) depositing a layer C1 of a diffusion barrier material on a substrate; ii) depositing, on the layer C1, a layer C2 of a carbon-containing material comprising silicon; iii) depositing, on the layer C2, a layer C3 of platinum; and b) heat-treating the stack obtained at a); and wherein the ratio of the number of platinum atoms found in the layer C3 with respect to the number of silicon atoms found in the layer C2 is greater than or equal to two. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 26)
-
-
12. A method for producing a graphene sheet on a platinum silicide of formula PtxSi, wherein x is a number greater than or equal to two, comprising:
-
a) producing a stack by; i) depositing a layer C1 of a diffusion barrier material on a substrate; ii) depositing, on the layer C1, a layer C2 of a carbon-containing material free from silicon; iii) depositing, on the layer C2, a layer C3 of platinum; iv) depositing, on the layer C3, a layer C4 of a material of formula SiaCbHc wherein a is greater than 0 whereas b and c, which are identical or different, are greater than or equal to 0; and b) heat-treating the stack obtained at a); and wherein the ratio of the number of platinum atoms found in the layer C3 with respect to the number of silicon atoms found in the layer C4 is greater than or equal to two. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 27)
-
-
22. A structure, comprising:
-
a substrate; a layer C1 of a diffusion barrier material covering the substrate; a platinum silicide covering the layer C1, wherein the formula of the platinum silicide is PtxSi where x is a number greater than or equal to two and wherein the platinum silicide is in the form of a layer or spaced pins; and a graphene sheet covering the layer of pins of the platinum silicide. - View Dependent Claims (23, 24)
-
-
25. A structure, comprising a graphene sheet having two faces, wherein the graphene sheet comprises on one of its faces a platinum silicide of formula PtxSi where x is a number greater than or equal to two, and the platinum silicide is in the form of a layer or a plurality of spaced pins.
Specification