SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
1 Assignment
0 Petitions
Accused Products
Abstract
A method of forming a semiconductor device is provided. The method includes preparing a substrate having a transistor region and an alignment region, forming a first trench and a second trench in the substrate of the transistor region and in the substrate of the alignment region, respectively, forming a drift region in the substrate of the transistor region, forming two third trenches respectively adjacent to two ends of the drift region, and forming an isolation pattern in the first trench, a buried dielectric pattern in the second trench, and dielectric patterns in the two third trenches, respectively. A depth of the first trench is less than a depth of the third trenches, and the depth of the first trench is equal or substantially equal to a depth of the second trench.
8 Citations
20 Claims
-
1-8. -8. (canceled)
-
9. A semiconductor device comprising:
-
two dielectric patterns in a substrate; a drift region disposed in the substrate between the two dielectric patterns to have a protrusion protruding toward a bottom surface of the substrate; an isolation pattern in the drift region between the two dielectric patterns; a gate pattern on the substrate; and a source region and a drain region at both sides of the gate pattern, wherein a depth of the two dielectric patterns is greater than a depth of the isolation pattern. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. A semiconductor device comprising:
-
a substrate; a drift region in the substrate, wherein the drift region includes a protrusion; a first doping pattern; a second doping pattern; an isolation pattern between the first and second doping patterns, wherein the isolation pattern is spaced apart from the first doping pattern and contacts the second doping pattern; and a gate pattern on the substrate, wherein the gate pattern overlaps at least a portion of the isolation pattern, wherein the protrusion of the drift region overlaps at least a portion of the isolation pattern. - View Dependent Claims (17, 18, 19, 20)
-
Specification