SUPPORT SUBSTRATE

• US 20130149485A1
• Filed: 02/06/2013
• Published: 06/13/2013
• Est. Priority Date: 08/06/2010
• Status: Abandoned Application

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Furukawa, Kazuya, Nishihara, Yoshiyuki
• Application Number:
  US13/760,671
• Publication Number:
  US 20130149485A1
• Time in Patent Office: Days
• US Class Current: 428/76
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: Y10T 428/239 Complete cover or casing
• CPC Class Codes: Y10T 428/24777 Edge feature
• CPC Class Codes: Y10T 428/25 Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Abstract

This invention relates to a support substrate that is to be attached to a substrate to be supported to thereby support the substrate to be supported, including: a support substrate main body having an attachment surface that is to be attached to the substrate to be supported; and a conductive film mainly including a fluorine-doped tin oxide, which has been formed on at least a surface opposite to the attachment surface among surfaces of the support substrate main body.

Claims

1. A support substrate that is to be attached to a substrate to be supported to thereby support the substrate to be supported, comprising:

a support substrate main body having an attachment surface that is to be attached to the substrate to be supported; and

a conductive film mainly comprising a fluorine-doped tin oxide, which has been formed on at least a surface opposite to the attachment surface among surfaces of the support substrate main body.

2. The support substrate according to claim 1, wherein all the surfaces of the support substrate main body are covered with the conductive film.

3. The support substrate according to claim 1, wherein the conductive film has a thickness of 5 nm to 2 μ

m.

4. The support substrate according to claim 1, wherein an edge surface of the support substrate main body has a curvature radius R of 50 to 800 μ

m.

5. The support substrate according to claim 1, wherein the conductive film has a sheet resistance of 100 kΩ

/□

or less.