LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a flexible substrate;
a driving circuit portion over the flexible substrate, comprising;
a first transistor comprising;
a first gate over the flexible substrate;
a gate insulating layer over the first gate;
a first oxide semiconductor layer over the gate insulating layer;
a first source over the first oxide semiconductor layer;
a first drain over the first oxide semiconductor layer; and
an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, at least a part of the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source and the first drain;
a pixel portion over the flexible substrate, comprising;
a second transistor comprising;
a second gate over the flexible substrate;
the gate insulating layer over the second gate;
a second oxide semiconductor layer over the gate insulating layer;
a second source over the second oxide semiconductor layer;
a second drain over the second oxide semiconductor layer; and
the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, at least a part of the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source and the second drain,a color filter over the oxide insulating layer;
a first electrode layer over the color filter and electrically connected to the second transistor;
an EL layer over the first electrode layer; and
a second electrode layer over the EL layer,wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and the first oxide semiconductor layer.
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Accused Products
Abstract
An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.
11 Citations
12 Claims
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1. A semiconductor device comprising:
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a flexible substrate; a driving circuit portion over the flexible substrate, comprising; a first transistor comprising; a first gate over the flexible substrate; a gate insulating layer over the first gate; a first oxide semiconductor layer over the gate insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; and an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, at least a part of the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source and the first drain; a pixel portion over the flexible substrate, comprising; a second transistor comprising; a second gate over the flexible substrate; the gate insulating layer over the second gate; a second oxide semiconductor layer over the gate insulating layer; a second source over the second oxide semiconductor layer; a second drain over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, at least a part of the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source and the second drain, a color filter over the oxide insulating layer; a first electrode layer over the color filter and electrically connected to the second transistor; an EL layer over the first electrode layer; and a second electrode layer over the EL layer, wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and the first oxide semiconductor layer. - View Dependent Claims (2, 3, 7, 9, 11)
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4. A semiconductor device comprising:
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a flexible substrate; a driving circuit portion over the flexible substrate, comprising; a first transistor comprising; a first gate over the flexible substrate; a gate insulating layer over the first gate; a first oxide semiconductor layer over the gate insulating layer; a first source over the first oxide semiconductor layer; a first drain over the first oxide semiconductor layer; and an oxide insulating layer over the first oxide semiconductor layer, the first source, and the first drain, at least a part of the oxide insulating layer being in contact with at least a part of the first oxide semiconductor layer between the first source and the first drain, a pixel portion over the flexible substrate, comprising; a second transistor comprising; a second gate over the flexible substrate; the gate insulating layer over the second gate; a second oxide semiconductor layer over the gate insulating layer; a second source over the second oxide semiconductor layer; a second drain over the second oxide semiconductor layer; and the oxide insulating layer over the second oxide semiconductor layer, the second source, and the second drain, at least a part of the oxide insulating layer being in contact with at least a part of the second oxide semiconductor layer between the second source and the second drain; a color filter over the oxide insulating layer; a first electrode layer over the color filter and electrically connected to the second transistor through a connection electrode layer; an EL layer over the first electrode layer; and a second electrode layer over the EL layer, wherein the first transistor comprises a conductive layer over the oxide insulating layer, the conductive layer overlapping with the first gate and the first oxide semiconductor layer. - View Dependent Claims (5, 6, 8, 10, 12)
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Specification