DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
1. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps offorming a pixel electrode covered by a base film on a substrate;
- forming a semiconductor film over the base film;
forming a gate insulating film over the semiconductor film;
forming a gate electrode over the gate insulating film;
forming an impurity region at the semiconductor film;
forming a first insulating nitride film over the gate electrode;
forming an organic resin film over the first insulating nitride film;
forming a first opening portion at the organic resin film over the impurity region;
forming a second insulating nitride film to cover the first opening portion;
forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion;
forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion;
wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode;
in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring.
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Accused Products
Abstract
To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
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Citations
12 Claims
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1. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of
forming a pixel electrode covered by a base film on a substrate; -
forming a semiconductor film over the base film; forming a gate insulating film over the semiconductor film; forming a gate electrode over the gate insulating film; forming an impurity region at the semiconductor film; forming a first insulating nitride film over the gate electrode; forming an organic resin film over the first insulating nitride film; forming a first opening portion at the organic resin film over the impurity region; forming a second insulating nitride film to cover the first opening portion; forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion; forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion; wherein in forming the first opening portion, the organic resin film is etched over the pixel electrode; in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. - View Dependent Claims (3, 5, 7, 9, 11)
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2. A method of fabricating a display device comprising a method of fabricating a display device comprising the steps of:
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forming a pixel electrode covered by a base film on a substrate; forming a semiconductor film over the base film; forming a gate insulating film over the semiconductor film; forming a gate electrode over the gate insulating film; forming an impurity region at the semiconductor film; forming a first insulating nitride film over the gate electrode; forming an acrylic film over the first insulating nitride film; forming a first opening portion at the acrylic film over the impurity region; forming a second insulating nitride film to cover the first opening portion; forming a second opening portion by etching the second insulating nitride film, the first insulating nitride film and the gate insulating film at a bottom face of the first opening portion, forming a wiring over the second insulating nitride film and connecting the impurity region and the wiring through the first opening portion and the second opening portion; wherein in forming the first opening portion, the acrylic film is etched over the pixel electrode, in forming the second opening portion, the pixel electrode is exposed by etching the second insulating nitride film, the first insulating nitride film, the gate insulating film and the base film and thereafter connecting the pixel electrode and the wiring. - View Dependent Claims (4, 6, 8, 10, 12)
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Specification