METHOD OF DEPOSITING A SILICON GERMANIUM TIN LAYER ON A SUBSTRATE

• US 20130183814A1
• Filed: 01/08/2013
• Published: 07/18/2013
• Est. Priority Date: 01/13/2012
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: HUANG, YI-CHIAU, SANCHEZ, ERROL ANTONIO C.
• Application Number:
  US13/736,417
• Publication Number:
  US 20130183814A1
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02535 including tin
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02636 Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
• CPC Class Codes: H01L 29/161 including two or more of the elements provided for in group H01L29/16 , e.g. alloys H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain

Abstract

Methods of depositing silicon germanium tin (SiGeSn) layer on a substrate are disclosed herein. In some embodiments, a method may include co-flowing a silicon source, a germanium source, and a tin source comprising a tin halide to a process chamber at a temperature of about 450 degrees Celsius or below and a pressure of about 100 Torr or below to deposit the SiGeSn layer on a first surface of the substrate. In some embodiments, the tin halide comprises tin tetrachloride (SnCl₄).

Claims

1. A method of depositing silicon germanium tin (SiGeSn) layer on a substrate, comprising:

co-flowing a silicon source, a germanium source, and a tin source comprising a tin halide to a process chamber at a temperature of about 450 degrees Celsius or below and a pressure of about 100 Torr or below to deposit the SiGeSn layer on a first surface of the substrate.

2. The method of claim 1, wherein the tin halide comprises tin tetrachloride (SnCl₄).

3. The method of claim 1, further comprising:

co-flowing a second gas with one or more of the silicon, germanium, and tin sources.

4. The method of claim 3, wherein the second gas comprises at least one of hydrogen (H₂), nitrogen (N₂), argon (Ar), or helium (He).

5. The method of claim 1, wherein the silicon source comprises one or more silanes or chlorinated silanes.

6. The method of claim 1, wherein the germanium source comprises one or more germanes or chlorinated germanes.

7. The method of claim 1, further comprising:

etching the SiGeSn layer to selectively remove a portion of the SiGeSn layer from a second surface of a dielectric layer disposed on the substrate adjacent to the first surface of the substrate.

8. The method of claim 7, wherein depositing the SiGeSn layer and etching the SiGeSn layer is performed simultaneously.

9. The method of claim 1, further comprising:

co-flowing a dopant source with one or more of the silicon, germanium, and tin sources.

10. The method of claim 1, wherein a concentration of tin (Sn) in the SiGeSn layer is about 8 to about 9% and wherein the silicon source gas comprises one or more silanes or chlorinated silanes.

12. The computer readable medium of claim 10, wherein the tin halide comprises tin tetrachloride (SnCl₄).

13. The computer readable medium of claim 10, further comprising:

co-flowing a second gas with one or more of the silicon, germanium and tin sources.

14. The computer readable medium of claim 13, wherein the second gas comprises at least one of hydrogen (H₂), nitrogen (N₂), argon (Ar), or helium (He).

15. The computer readable medium of claim 10, wherein the silicon source comprises one or more silicon hydrides or chlorinated silicon hydrides.

16. The computer readable medium of claim 10, wherein the germanium source comprises one or more germanium hydrides or chlorinated germanium hydrides.

17. The computer readable medium of claim 10, further comprising:

etching the SiGeSn layer to selectively remove a portion of the SiGeSn layer from a second surface of a dielectric layer disposed on the substrate adjacent to the first surface of the substrate.

18. The computer readable medium of claim 17, wherein depositing the SiGeSn layer and etching the SiGeSn layer is performed simultaneously.

19. The computer readable medium of claim 10, further comprising:

co-flowing a dopant source with one or more of the silicon, germanium, and tin sources.

20. The computer readable medium of claim 10, wherein a concentration of tin in the SiGeSn layer is about 8 to about 9% and wherein the silicon source gas comprises one or more silanes or chlorinated silanes.

11. A computer readable medium having instructions stored thereon that, when executed, cause a method of depositing silicon germanium tin (SiGeSn) layer on a substrate to be performed in a process chamber, the method comprising:

co-flowing a silicon source, a germanium source, and a tin source comprising a tin halide to a process chamber at a temperature of about 450 degrees Celsius or below and a pressure of about 100 Torr or below to deposit the SiGeSn layer on a first surface of the substrate.