REASONANT APPARATUS FOR WIRELESS POWER TRANSFER

• US 20130187475A1
• Filed: 01/10/2013
• Published: 07/25/2013
• Est. Priority Date: 01/10/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: VENDIK, Irina Borisovna, KIM, Ki Young, VENDIK, Orest Genrihovich, KHOLODNYAK, Dmitry Victorovich, TURALCHUK, Pavel Anatolevich, KOZLOV, Dmitry Sergeevich, ZAMESHAEVA, Evgenia Yurevna, OLYUNIN, Nikolay Nikolaevich
• Granted Patent: US 9,508,488 B2
• Time in Patent Office: Days
• US Class Current: 307/104
• CPC Class Codes: H01F 38/14 Inductive couplings for wireless supply or distribution of electric power using inductive coupling H02J50/10
• CPC Class Codes: H02J 50/05 using capacitive coupling
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02J 50/40 using two or more transmitting or receiving devices H02J50/50 takes precedence
• CPC Class Codes: H02J 50/80 involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
• CPC Class Codes: H04B 5/26 using coils
• CPC Class Codes: H04B 5/72 for local intradevice communication
• CPC Class Codes: H04B 5/79 for data transfer in combination with power transfer

Abstract

Provided is a bulk acoustic resonator (BAR)-based resonant structure in relation to electric and radio technologies, and more particularly, to a wireless power transmission system. A resonant apparatus for wireless power transmission may include a conducting loop, and a high quality capacitor. The high quality capacitor may include a metacapacitor including a thin piezoelectric layer disposed between two metal electrodes. The metacapacitor may be disposed between two dielectric layers of which central portions are etched, and the conducting loop may be disposed on an upper layer of the two dielectric layers.

Claims

1. A resonant apparatus for wireless power transmission, the resonant apparatus comprising:

a conducting loop;

two dielectric layers; and

a capacitor

comprising a metacapacitor which includes a piezoelectric layer disposed between two metal electrodes,

wherein the metacapacitor is disposed between the two dielectric layers of which central portions are etched, and the conducting loop is disposed on an upper layer of the two dielectric layers.

2. The resonant apparatus of claim 1, wherein the conducting loop comprises a planar conductor that has a thickness that is less than a width of the planar conductor.

3. The resonant apparatus of claim 1, wherein the conducting loop comprises a shape of a circle.

4. The resonant apparatus of claim 1, wherein the central portions of the dielectric layers are etched to provide a free space for acoustic oscillation of a resonator membrane.

5. The resonant apparatus of claim 1, wherein a thickness of the upper dielectric layer is determined to reduce an impact of a parasitic capacitance between the conducting loop and an upper electrode of the metacapacitor.

6. The resonant apparatus of claim 1, wherein a thickness of a lower layer of the two dielectric layers is determined to ensure a mechanical strength of the resonant apparatus.

7. The resonant apparatus of claim 1, wherein the two dielectric layers comprise silicon dioxide.

8. The resonant apparatus of claim 1, wherein the conducting loop is connected to the two metal electrodes of the metacapacitor by metalized via holes or external connectors.

9. The resonant apparatus of claim 1, wherein the piezoelectric layer of the metacapacitor comprises a ceramic material having a piezoelectric effect.

10. The resonant apparatus of claim 1, wherein the piezoelectric layer of the metacapacitor comprises plumbum titanate-zirconate (Pb(Zr_xTi_1-x)O₃ (PZT)).

11. The resonant apparatus of claim 1, wherein the piezoelectric layer of the metacapacitor comprises a mono-crystalline material having a electromechanical coupling coefficient above a threshold, a quality factor (Q-factor) above a second threshold, and a dielectric loss below a third threshold.

12. The resonant apparatus of claim 1, wherein a structure of the resonant apparatus comprises a planar multilayer structure made by a thin film technology.

13. The resonant apparatus of claim 1, wherein a structure of the resonant apparatus comprises a circular structure or a polygonal structure.

14. The resonant apparatus of claim 1, wherein a diameter of the resonant apparatus is smaller than a hundredth of a wavelength.

15. The resonant apparatus of claim 1, wherein thicknesses of the two dielectric layers are determined to be thicknesses by which an acoustic oscillation of a shear wave resonates at a frequency exceeding a system operating frequency, respectively.

16. The resonant apparatus of claim 1, wherein the metacapacitor is operated as an acoustic resonator, and an external impedance at a system operating frequency of the acoustic resonator is equivalent to an impedance of a capacitor having a capacitance value above a predetermined threshold.

17. The resonant apparatus of claim 1, wherein a capacitance value of the metacapacitor is determined to ensure a resonant response of the resonant apparatus at a selected system operating frequency, in combination with an inductance of the conducting loop.

18. A wireless power transmission device, comprising:

a metacapacitor comprising a piezoelectric layer that is disposed between an upper electrode layer and a lower electrode layer;

a dielectric layer disposed on the upper electrode layer; and

a conducting loop layer disposed on the dielectric layer,

wherein the wireless power transmission device is configured to transfer and/or receive power wirelessly through magnetic coupling.

19. The wireless power transmission device of claim 18, wherein the conducting loop is connected to the upper electrode layer and the bottom electrode layer of the metacapacitor by metalized holes.

20. The wireless power transmission device of claim 18, wherein the dielectric layer further comprises a lower dielectric layer disposed below the metacapacitor.