LIGHT EMITTER PACKAGES AND DEVICES HAVING IMPROVED WIRE BONDING AND RELATED METHODS

• US 20130193455A1
• Filed: 09/05/2012
• Published: 08/01/2013
• Est. Priority Date: 09/06/2011
• Status: Active Grant

• Current Assignee: Creeled Incorporated
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Andrews, Peter Scott, Joo, Sung Chul
• Granted Patent: US 9,099,616 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29191 The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/43848 Thermal treatments, e.g. annealing, controlled cooling
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45565 Single coating layer
• CPC Class Codes: H01L 2224/45644 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45669 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49113 : the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78301 : Capillary
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/85099 : Ambient temperature
• CPC Class Codes: H01L 2224/85181 : connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/78 : Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01204 : 4N purity grades, i.e. 99.99%
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10155 : being other than a cuboid
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/20102 : Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
• CPC Class Codes: H01L 2924/20103 : Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
• CPC Class Codes: H01L 2924/20104 : Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K
• CPC Class Codes: H01L 2924/2075 : larger or equal to 1 micron less than 10 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2933/0033 : relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/48 : characterised by the semiconductor body packages

Abstract

Light emitter packages and devices having improved wire bonding and related methods are disclosed. In one embodiment a light emitter package can include at least one light emitting diode (LED) chip electrically connected to an electrical element via a wire bond. The wire bond can be provided at improved wire bonding parameters such as a temperature of approximately 150° C. or less, a bonding time of approximately 100 ms or less, a power of approximately 1700 mW or less, and a force of approximately 100 grams force (gf) or less, or combinations thereof.

Claims

1. A light emitter package, comprising:

a substrate;

at least one light emitting diode (LED) chip attached to the substrate; and

a wire bond electrically connected to the LED chip for electrically connecting to an electrical element, the wire bond resulting from wire bonding to the LED chip at a temperature of approximately 150°

C. or less.

2. The light emitter package of claim 1, further comprising an epoxy die attach material disposed between the substrate and the at least one LED chip.

3. The light emitter package of claim 2, wherein the epoxy die attach material comprises a silicone epoxy die attach material.

4. The light emitter package of claim 2, wherein the epoxy die attach material comprises a silver (Ag) epoxy die attach material.

5. The light emitter package of claim 1, wherein the substrate is disposed within an LED package.

6. The light emitter package of claim 1, wherein the wire bond comprises a ball and a tail.

7. The light emitter package of claim 1, wherein the wire bond is provided at a force of approximately 100 grams force (gf) or less.

8. The light emitter package of claim 1, wherein the wire bond is provided at a power of approximately 1700 milliwatts (mW) or less.

9. The light emitter package of claim 1, wherein the wire bond is provided at a bonding time of approximately 100 milliseconds (ms) or less.

10. The light emitter package of claim 1, wherein the package comprises a thermal resistance of approximately 220°

C./W or less.

11. The light emitter package of claim 1, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

12. The light emitter package of claim 1, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

13. A light emitter package, comprising:

a substrate;

at least one light emitting diode (LED) chip bonded to the substrate via a silicone epoxy; and

an electrical element;

wherein the at least one LED chip is electrically connected to the electrical element via a wire bond provided at a temperature approximately equal to or less than a glass transition temperature of the silicone epoxy.

14. The light emitter package of claim 13, wherein the silicone epoxy comprises a glass transition temperature of approximately 140°

C. or less.

15. The light emitter package of claim 13, wherein the substrate comprises a ceramic material.

16. The light emitter package of claim 13, wherein the substrate comprises a metal.

17. The light emitter package of claim 13, wherein the substrate is disposed within an LED package.

18. The light emitter package of claim 13, wherein the wire bond comprises a ball and a tail.

19. The light emitter package of claim 13, wherein the wire bond is provided at a force of approximately 100 grams force (gf) or less.

20. The light emitter package of claim 13, wherein the wire bond is provided at a power of approximately 1700 mW or less.

21. The light emitter package of claim 13, wherein the wire bond is provided at a bonding time of approximately 100 milliseconds (ms) or less.

22. The light emitter package of claim 13, wherein the package comprises a thermal resistance of approximately 220°

C./W or less.

23. The light emitter package of claim 13, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

24. The light emitter package of claim 13, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

25. A light emitter package, comprising:

at least one light emitting diode (LED) chip; and

an electrical element;

wherein the at least one LED chip is electrically connected to the electrical element via a wire bond provided at a plurality of the following improved parameters or combinations thereof;

(i) a temperature of approximately 150°

C. or less;

(ii) a bonding time of approximately 100 ms or less;

(iii) a power of approximately 1700 mW or less; and

(iv) a force of approximately 100 grams force (gf) or less.

26. The light emitter package of claim 25, wherein the package comprises a thermal resistance of approximately 220°

C./W or less.

27. The light emitter package of claim 25, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

28. The light emitter package of claim 25, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

29. The light emitter package of claim 25, further comprising a substrate.

30. The light emitter package of claim 29, wherein the substrate comprises a portion of an LED package.

31. The light emitter package of claim 25, further comprising an epoxy die attach material disposed between the substrate and the at least one LED chip.

32. The light emitter package of claim 25, wherein the epoxy die attach material comprises a silicone epoxy die attach material.

33. The light emitter package of claim 32, wherein the epoxy die attach material comprises a silver (Ag) epoxy die attach material.

34. A method of providing a light emitter package, the method comprising:

providing at least one light emitting diode (LED) chip;

providing an electrical element; and

wire bonding the at least one LED chip to the electrical element at a temperature of approximately 150°

C. or less.

35. The method of claim 34, further comprising providing a substrate bonded to the at least one LED chip.

36. The method of claim 35, further comprising providing an epoxy die attach material disposed between the substrate and the at least on LED chip.

37. The method of claim 35, wherein the light emitter package comprises a thermal resistance of approximately 220°

C./W or less.

38. The method of claim 35, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

39. The method of claim 35, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

40. The method of claim 35, wherein wire bonding the at least one LED chip comprises wire bonding at a force of approximately 100 grams force (gf) or less.

41. The method of claim 35, wherein wire bonding the at least one LED chip comprises wire bonding at a power of approximately 1700 mW or less.

42. The method of claim 35, wherein wire bonding the at least one LED chip comprises wire bonding at a time of approximately 100 milliseconds (ms) or less.

43. A method of providing a light emitter package, the method comprising:

providing a substrate;

providing at least one light emitting diode (LED) chip; and

bonding the at least one LED chip to the substrate using a silicone epoxy;

providing an electrical element;

wire bonding the LED chip to the electrical element at a temperature approximately equal to or less than a glass transition temperature of the silicone epoxy.

44. The method of claim 43, wherein the silicone epoxy comprises a glass transition temperature of approximately 140°

C. or less.

45. The method of claim 43, wherein providing the substrate comprises providing a ceramic material.

46. The method of claim 43, wherein providing the substrate comprises providing a metal.

47. The method of claim 43, wherein the substrate is provided within an LED package.

48. The method of claim 43, wherein wire bonding the LED chip comprises wire bonding at a force of approximately 100 grams force (gf) or less.

49. The method of claim 43, wherein wire bonding the LED chip comprises wire bonding at a power of approximately 1700 mW or less.

50. The method of claim 43, wherein wire bonding the LED chip comprises wire bonding at a bonding time of approximately 100 milliseconds (ms) or less.

51. The method of claim 43, wherein the package comprises a thermal resistance of approximately 220°

C./W or less.

52. The method of claim 43, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

53. The method of claim 43, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

54. A method of providing a light emitter package, the method comprising:

providing at least one light emitting diode (LED) chip;

providing an electrical element;

wire bonding the LED chip to the electrical element using a plurality of four predetermined parameters or a combination thereof, the parameters comprising;

a temperature of approximately 150°

C. or less;

(ii) a bonding time of approximately 100 ms or less;

(iii) a power of approximately 1700 mW or less; and

(iv) a force of approximately 100 grams force (gf) or less.

55. The method of claim 54, further comprising providing a substrate bonded to the at least one LED chip.

56. The method of claim 55, further comprising providing an epoxy die attach material disposed between the substrate and the at least on LED chip.

57. The method of claim 54, wherein the package comprises a thermal resistance of approximately 220°

C./W or less.

58. The method of claim 54, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

59. The method of claim 54, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

60. A light emitter package, comprising:

a substrate; and

at least one light emitting diode (LED) chip attached to the substrate;

wherein the thermal resistance of the package comprises approximately 220 °

C./W or less.

61. The package of claim 60, wherein the package comprises a thermal resistance of approximately 80°

C./W or less.

62. The package of claim 60, wherein the package comprises a thermal resistance of approximately 60°

C./W or less.

63. The package of claim 60, wherein the LED chip is wire bonded to an electrical element within the package, the wire bond being provided using a plurality of four predetermined parameters or a combination thereof, the parameters comprising:

(v) a temperature of approximately 150°

C. or less;

(vi) a bonding time of approximately 100 ms or less;

(vii) a power of approximately 1700 mW or less; and

(viii) a force of approximately 100 grams force (gf) or less.