MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS
First Claim
Patent Images
1. A film deposition apparatus comprising:
- a process chamber arranged to hold a vacuum pressure and to process a semiconductor substrate;
a source gas supplying unit arranged to supply a source gas to the process chamber; and
an oxygen radical supplying unit arranged to supply an oxygen radical or an oxygen-containing gas to the process chamber,wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber by the source gas supplying unit and the oxygen radical supplying unit, to form an oxide film over the semiconductor substrate on which resist patterns are formed, andwherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the resist patterns are formed, slimming of the resist patterns by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit.
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Abstract
In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
7 Citations
12 Claims
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1. A film deposition apparatus comprising:
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a process chamber arranged to hold a vacuum pressure and to process a semiconductor substrate; a source gas supplying unit arranged to supply a source gas to the process chamber; and an oxygen radical supplying unit arranged to supply an oxygen radical or an oxygen-containing gas to the process chamber, wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber by the source gas supplying unit and the oxygen radical supplying unit, to form an oxide film over the semiconductor substrate on which resist patterns are formed, and wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the resist patterns are formed, slimming of the resist patterns by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit. - View Dependent Claims (2, 3)
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4. A film deposition apparatus comprising:
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a process chamber arranged to hold a vacuum pressure and to process a semiconductor substrate; a source gas supplying unit arranged to supply a source gas to the process chamber; and an oxygen radical supplying unit arranged to supply an oxygen radical or an oxygen-containing gas to the process chamber, wherein the film deposition apparatus is arranged so that the source gas and the oxygen radical or the oxygen-containing gas are alternately supplied to the process chamber by the source gas supplying unit and the oxygen radical supplying unit, to form an oxide film over the semiconductor substrate on which line parts arranged at a predetermined pitch are formed, and wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the line parts are formed, slimming of the line parts by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit. - View Dependent Claims (5, 6)
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7. A film deposition apparatus configured to deposit an oxide film on line parts formed on a semiconductor substrate so as to isotropically cover the line parts with the oxide film by alternately supplying a source gas and one of an oxide radical and an oxygen-containing gas to the semiconductor substrate for forming a mask pattern including a film to be etched and side wall parts made of the oxide film that covers the side wall parts of the line parts arranged at a predetermined pitch, the film deposition apparatus comprising:
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a process chamber arranged to hold a vacuum pressure and to process the semiconductor substrate; a source gas supplying unit arranged to supply the source gas to the process chamber; and an oxygen radical supplying unit arranged to supply the oxygen radical or the oxygen-containing gas to the process chamber, wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the line parts are formed, slimming of the line parts by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit. - View Dependent Claims (8, 9)
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10. A film deposition apparatus configured to deposit an oxide film on first line parts formed on a semiconductor substrate so as to istropically cover the first line parts with the oxide film by alternately supplying a source gas and one of an oxide radical and an oxygen-containing gas to the semiconductor substrate for forming a mask pattern including a film to be etched, a first pattern including first line parts, and a second pattern including second line parts arranged at a second pitch substantially equal to the first pitch, alternately with the first line parts by being shifted by half of the first pitch from the first line parts, the film deposition apparatus comprising:
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a process chamber arranged to hold a vacuum pressure and to process the semiconductor substrate; a source gas supplying unit arranged to supply the source gas to the process chamber; and an oxygen radical supplying unit arranged to supply the oxygen radical or the oxygen-containing gas to the process chamber, wherein the film deposition apparatus is arranged to perform, before the oxide film is formed over the semiconductor substrate on which the first pattern are formed, slimming of the first pattern by supplying the oxygen radical to the process chamber by the oxygen radical supplying unit. - View Dependent Claims (11, 12)
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Specification