SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD
First Claim
Patent Images
1. A semiconductor device comprising:
- a region of semiconductor material having a major surface;
a trench control structure in the region of semiconductor material including a gate dielectric layer farmed adjacent sidewall surfaces of the trench control structure and a gate electrode comprising a first conductive material adjoining the gate dielectric layer;
a body region within the region of semiconductor material and adjacent the trench control structure, where the trench control structure is configured to provide a channel region within the body region, where the channel region includes a source end and a drain end;
a source region within the body region having a first side adjacent the trench control structure and a second side opposite to the first side; and
a first feature comprising a material other than the first conductive material within the gate electrode, where the first feature is configured to induce stress within portions of the channel region, and wherein the first feature comprises;
a base portion; and
a pair of side portions extending from the base portion.
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Abstract
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.
12 Citations
47 Claims
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1. A semiconductor device comprising:
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a region of semiconductor material having a major surface; a trench control structure in the region of semiconductor material including a gate dielectric layer farmed adjacent sidewall surfaces of the trench control structure and a gate electrode comprising a first conductive material adjoining the gate dielectric layer; a body region within the region of semiconductor material and adjacent the trench control structure, where the trench control structure is configured to provide a channel region within the body region, where the channel region includes a source end and a drain end; a source region within the body region having a first side adjacent the trench control structure and a second side opposite to the first side; and a first feature comprising a material other than the first conductive material within the gate electrode, where the first feature is configured to induce stress within portions of the channel region, and wherein the first feature comprises; a base portion; and a pair of side portions extending from the base portion. - View Dependent Claims (2, 4, 5, 6, 8, 9)
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3. (canceled)
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7. (canceled)
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10. (canceled)
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11. (canceled)
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12. An insulating gate field effect transistor structure having enhanced mobility comprising:
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a region of semiconductor material having a first conductivity type, a first major surface, and a second major surface opposing the first major surface, where the region of semiconductor material at the second major surface is configured as a drain region; a trench structure within the region of semiconductor material comprising a shield electrode in a lower portion of a trench, where the shield electrode is separated from the region of semiconductor material by a first dielectric layer;
a gate electrode in an upper portion of the trench, wherein the gate electrode is separated from the region of semiconductor material by a second dielectric layer and separated from the shield electrode by a third dielectric layer;a body region having a second conductivity type opposite to the first conductivity type in the region of semiconductor material and adjacent to the trench structure, where the gate electrode is configured to form a channel region within the body region; a source region of the first conductivity type in spaced relationship with the body region having a first side adjacent to the trench structure and a second side opposite to the first side; and a first region within the gate electrode and comprising a silicide material that propagates stress within the region of semiconductor material adjacent to the trench control structure to provide the enhanced mobility. - View Dependent Claims (15, 16, 17, 18)
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13-14. -14. (canceled)
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19-35. -35. (canceled)
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36. A semiconductor device structure comprising:
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a region of semiconductor material having a first conductivity type, a first major surface, and a second major surface opposing the first major surface, where a portion of the region of semiconductor material is configured as a drain region; a trench structure within the region of semiconductor material comprising a shield electrode in a lower portion of a trench, where the shield electrode is separated from the region of semiconductor material by a first dielectric layer;
a gate electrode formed in an upper portion of the trench, wherein the gate electrode is separated from the region of semiconductor material by a second dielectric layer and separated from the shield electrode by a third dielectric layer;a body region having a second conductivity type opposite to the first conductivity type in the region of semiconductor material and adjacent to the trench structure, where the gate electrode is configured to form a channel region within the body region; a source region of the first conductivity type in spaced relationship with the body region having a first side adjacent to the trench structure and a second side opposite to the first side; a first feature within the gate electrode and comprising a material configured to propagate stress within the region of semiconductor material adjacent to the trench control structure; a second feature within the shield electrode and comprising a material configured to propagate stress with the region of semiconductor material within a drift region of the structure; and a third feature between the gate electrode and shield electrode and comprising a material configured to propagate stress within the region of semiconductor material proximate to a drain end of the channel region. - View Dependent Claims (37, 38, 39)
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40. A method of forming a semiconductor device comprising:
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providing a region of semiconductor material having a trench extending from a major surface and having an isolated shield electrode structure in a lower portion of the trench and a gate dielectric layer adjacent sidewalls of the trench; forming a first conductive layer adjacent the gate dielectric layer in the trench, the first conductive layer configured as part of a gate electrode structure; forming a stress inducing structure within the trench adjacent the first conductive layer, wherein the stress inducing structure and the first conductive layer comprises different materials; and forming a second conductive layer adjacent the stress inducing layer, the second conductive layer configured as another part of the gate electrode structure. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47)
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Specification