Semiconductor Device and Method of Forming a Robust Fan-Out Package including Vertical Interconnects and Mechanical Support Layer
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die;
depositing an encapsulant around the semiconductor die;
forming an interconnect structure having a conductive bump over the encapsulant and semiconductor die;
forming a mechanical support layer over the interconnect structure and around the conductive bump;
forming an opening through the encapsulant that extends to the interconnect structure; and
depositing conductive material within the opening to form a conductive through encapsulant via (TEV) electrically connected to the interconnect structure.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a semiconductor die. An encapsulant is deposited around the semiconductor die. An interconnect structure having a conductive bump is formed over the encapsulant and semiconductor die. A mechanical support layer is formed over the interconnect structure and around the conductive bump. The mechanical support layer is formed over a corner of the semiconductor die and over a corner of the interconnect structure. An opening is formed through the encapsulant that extends to the interconnect structure. A conductive material is deposited within the opening to form a conductive through encapsulant via (TEV) that is electrically connected to the interconnect structure. A semiconductor device is mounted to the TEV and over the semiconductor die to form a package-on-package (PoP) device. A warpage balance layer is formed over the encapsulant opposite the interconnect structure.
115 Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor die; depositing an encapsulant around the semiconductor die; forming an interconnect structure having a conductive bump over the encapsulant and semiconductor die; forming a mechanical support layer over the interconnect structure and around the conductive bump; forming an opening through the encapsulant that extends to the interconnect structure; and depositing conductive material within the opening to form a conductive through encapsulant via (TEV) electrically connected to the interconnect structure. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a semiconductor die; depositing an encapsulant around the semiconductor die; forming an interconnect structure having a conductive bump over the encapsulant and semiconductor die; forming a mechanical support layer over the interconnect structure and around the conductive bump; and forming a through encapsulant via (TEV) through the encapsulant and electrically connected to the interconnect structure. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a semiconductor die; depositing an encapsulant around the semiconductor die; forming an interconnect structure over the encapsulant and semiconductor die; and forming a mechanical support layer over the interconnect structure. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a semiconductor die; an encapsulant deposited around the semiconductor die; an interconnect structure formed over the encapsulant and semiconductor die; a mechanical support layer formed over the interconnect structure; and a through encapsulant via (TEV) formed through the encapsulant and electrically connected to the interconnect structure. - View Dependent Claims (22, 23, 24, 25)
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Specification