METHODS OF FORMING SEMICONDUCTOR STRUCTURES

• US 20130252422A1
• Filed: 05/30/2013
• Published: 09/26/2013
• Est. Priority Date: 06/15/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: CHIOU, Wen-Chih, WU, Tsang-Jiuh, YANG, Ku-Feng, CHEN, Hsin-Yu
• Granted Patent: US 8,673,775 B2
• Time in Patent Office: Days
• US Class Current: 438/667
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a method of forming a semiconductor structure, a through-silicon-via (TSV) opening is formed in a substrate. A dielectric layer is formed to continuously extend over the substrate and into the TSV opening. At least one conductive material is formed over the dielectric layer and in the TSV opening. A portion of the at least one conductive material that is over the dielectric layer is removed to form a TSV structure in the substrate. A metallic line is formed in the dielectric layer. A portion of the substrate is removed, such that the TSV structure continuously extends through the substrate and the dielectric layer.

Claims

1. A method of forming a semiconductor structure, the method comprising:

forming a through-silicon-via (TSV) opening in a substrate;

forming a dielectric layer continuously extending over the substrate and into the TSV opening;

forming at least one conductive material over the dielectric layer and in the TSV opening;

removing a portion of the at least one conductive material that is over the dielectric layer to form a TSV structure in the substrate;

forming a metallic line in the dielectric layer; and

removing a portion of the substrate, such that the TSV structure continuously extends through the substrate and the dielectric layer.

2. The method of claim 1, wherein forming the metallic line comprises:

forming a cap layer over the dielectric layer;

forming a patterned mask layer over the cap layer, the patterned mask layer covering the TSV structure and exposing a portion of the cap layer;

removing the exposed portion of the cap layer and a portion of the dielectric layer by using the patterned mask layer as an etch mask to form an opening in the dielectric layer;

removing the patterned mask layer; and

forming the metallic line in the opening in the dielectric layer.

3. The method of claim 2, wherein forming the metallic line in the opening in the dielectric layer comprises

forming at least one metallic material over the cap layer and in the opening in the dielectric layer;

and

removing a portion of the at least one metallic material that is over the dielectric layer by a chemical mechanical polish (CMP) process to form the metallic line in the opening in the dielectric layer, wherein a surface of the TSV structure is substantially leveled with a surface of the metallic line.

4. The method of claim 2, wherein the cap layer protects the TSV structure from being oxidized by the patterned mask layer.

5. The method of claim 1, further comprising:

forming at least one transistor over the substrate; and

forming at least one contact plug that is electrically coupled between the metallic line and the at least one transistor, wherein a surface of the dielectric layer is substantially leveled with the surface of the TSV structure.

6. The method of claim 5, wherein the TSV structure is formed without having an interface at a region that is substantially leveled with an interface between the at least one contact plug and the metallic line.

7. A method of forming a semiconductor structure, the method comprising:

forming a through-silicon-via (TSV) opening in a substrate;

forming a dielectric layer continuously extending over the substrate and into the TSV opening;

forming at least one conductive material over the dielectric layer, the at least one conductive material formed both outside and in the TSV opening; and

removing a first portion of the at least one conductive material outside the TSV opening, while leaving a second portion of the at least one conductive material in the TSV opening to form a TSV structure in the substrate,

wherein removing the first portion of the at least one conductive material comprises removing a partial thickness of a first portion of the dielectric layer underlying the first portion of the at least one conductive material.

8. The method of claim 7, wherein

after removing the partial thickness of the first portion of the dielectric layer, the first portion of the dielectric layer has a first thickness measured in a thickness direction of the substrate;

the dielectric layer further has a second portion interposed between the TSV structure and the substrate has a second thickness measured in a direction perpendicular to the thickness direction of the substrate, and

the second thickness is greater than the first thickness.

9. The method of claim 7, further comprising:

forming a metallic line in the first portion of the dielectric layer after removing the partial thickness of the first portion of the dielectric layer.

10. The method of claim 9, further comprising:

removing a portion of the substrate, such that the TSV structure continuously extends through the substrate and the dielectric layer.

11. The method of claim 9, wherein forming the metallic line comprises:

forming a cap layer over the dielectric layer;

forming a patterned mask layer over the cap layer, the patterned mask layer covering the TSV structure and exposing a portion of the cap layer;

removing the exposed portion of the cap layer and a part of the first portion of the dielectric layer by using the patterned mask layer as an etch mask to form an opening in the first portion of the dielectric layer;

removing the patterned mask layer; and

forming the metallic line in the opening.

12. The method of claim 11, wherein the cap layer protects the TSV structure from being oxidized by the patterned mask layer.

13. The method of claim 9, wherein forming the metallic line comprises:

forming an opening in the first portion of the dielectric layer;

forming at least one metallic material over the dielectric layer and in the opening; and

removing a portion of the at least one metallic material outside the opening to form the metallic line with an upper surface which is leveled with an upper surface of the TSV structure and leveled with an upper surface of the dielectric layer.

14. The method of claim 13, further comprising:

forming at least one transistor over the substrate; and

forming at least one contact plug that is electrically coupled between the metallic line and the at least one transistor.

15. A method of forming a semiconductor structure, the method comprising:

forming a semiconductor device over a substrate;

forming a dielectric layer over the substrate, the semiconductor device embedded in the dielectric layer;

forming a through-silicon-via (TSV) opening continuously extending through the dielectric layer and into the substrate;

forming a liner layer continuously extending over the dielectric layer and into the TSV opening;

forming at least one conductive material over the liner layer and in the TSV opening;

removing a portion of the at least one conductive material outside the TSV opening, while leaving a further portion of the at least one conductive material in the TSV opening to form a TSV structure in the substrate;

forming a metallic line in the liner layer outside the TSV opening; and

removing a portion of the substrate, such that the TSV structure continuously extends through the substrate, the dielectric layer and the liner layer, wherein

a first portion of the liner layer that is over the substrate has a first thickness measured in a thickness direction of the substrate, and

a second portion of the liner layer that is interposed between the TSV structure and the substrate has a second thickness measured in a direction perpendicular to the thickness direction of the substrate, and

the second thickness is greater than the first thickness.

16. The method of claim 15, wherein forming the metallic line comprises forming the metallic line in the first portion of the liner layer.

17. The method of claim 16, wherein forming the metallic line comprises forming the metallic line with an upper surface which is leveled with an upper surface of the TSV structure and leveled with an upper surface of the first portion of the liner layer.

18. The method of claim 17, wherein forming the metallic line comprises forming the metallic line with an entire thickness embedded in the first portion of the liner layer.

19. The method of claim 17, further comprising:

forming at least one contact plug in the dielectric layer and electrically coupled between the metallic line and the semiconductor device.

20. The method of claim 19, wherein the TSV structure is continuous at a region that is leveled with an interface between the at least one contact plug and the metallic line.