TECHNIQUES FOR USING MATERIAL SUBSTITUTION PROCESSES TO FORM REPLACEMENT METAL GATE ELECTRODES OF SEMICONDUCTOR DEVICES WITH SELF-ALIGNED CONTACTS

• US 20130260548A1
• Filed: 04/03/2012
• Published: 10/03/2013
• Est. Priority Date: 04/03/2012
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Park, Chang Seo
• Granted Patent: US 8,536,040 B1
• Time in Patent Office: Days
• US Class Current: 438/592
• CPC Class Codes: H01L 21/76897 Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step self-aligned silicidation on field effect transistors H01L29/665
• CPC Class Codes: H01L 29/49 Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET H01L29/435 takes precedence
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618

Abstract

Generally, the present disclosure is directed to techniques for using material substitution processes to form replacement metal gate electrodes, and for forming self-aligned contacts to semiconductor devices made up of the same. One illustrative method disclosed herein includes removing at least a dummy gate electrode to define a gate cavity, forming a work-function material in said gate cavity, forming a semiconductor material above said work-function material, and performing a material substitution process on said semiconductor material to substitute a replacement material for at least a portion of said semiconductor material.

Claims

1. A method, comprising:

removing at least a dummy gate electrode to define a gate cavity;

forming a work-function material in said gate cavity;

forming a semiconductor material above said work-function material; and

performing a material substitution process on said semiconductor material to substitute a replacement material for at least a portion of said semiconductor material.

2. The method of claim 1, wherein performing said material substitution process comprises forming a material layer comprising said replacement material above said semiconductor material and performing a heat treatment process.

3. The method of claim 1, wherein performing said material substitution process comprises exposing said semiconductor material to a gaseous treatment ambient comprising said replacement material.

4. The method of claim 1, wherein said semiconductor material comprises silicon and said replacement material comprises one of aluminum and tungsten.

5. A method, comprising:

forming a gate structure above an active area of a transistor device, said gate structure comprising at least a dummy gate electrode and a dummy gate dielectric layer;

forming a gate cavity in said gate structure by removing said dummy gate electrode and said dummy gate dielectric layer; and

forming a replacement gate structure by forming a high-k dielectric material inside of said gate cavity and above a channel region of said transistor device, forming a work-function material above said high-k dielectric material, forming a semiconductor material above said work-function material, and performing a material substitution process on said semiconductor material to substitute a replacement metal gate electrode material for at least a portion of said semiconductor material formed inside of said gate cavity.

6. The method of claim 5, wherein performing said material substitution process comprises substantially completely replacing said semiconductor material formed inside of said gate cavity with said replacement metal gate electrode material.

7. The method of claim 5, wherein performing said material substitution process comprises forming a layer of said replacement metal gate electrode material above said semiconductor material and performing a heat treatment process.

8. The method of claim 7, wherein said semiconductor material comprises silicon and said replacement metal gate electrode material comprises aluminum.

9. The method of claim 5, wherein performing said material substitution process comprises exposing said semiconductor material to a gaseous treatment ambient comprising said replacement metal gate electrode material.

10. The method of claim 5, wherein said semiconductor material comprises silicon, said replacement metal gate electrode material comprising tungsten, and said gaseous treatment ambient comprises tungsten hexafluoride.

11. The method of claim 5, further comprising removing an upper portion of said replacement metal gate electrode material to form a recess in said replacement gate structure.

12. The method of claim 11, further comprising forming a dielectric cap layer in said recess.

13. The method of claim 12, further comprising forming a contact opening in an interlayer dielectric material formed above said transistor device, said contact opening exposing at least a portion of said dielectric cap layer and at least a portion of a contact region of said active area.

14. A method, comprising:

forming a semiconductor device comprising a gate structure, said gate structure comprising a dummy gate electrode, a dummy gate dielectric layer; and

sidewall spacers adjacent to sidewalls of said dummy gate electrode;

selectively removing said dummy gate electrode and said dummy gate dielectric layer to form a gate cavity in said gate structure;

forming a high-k dielectric material inside of said gate cavity, said high-k dielectric material having a dielectric constant of approximately 10 or higher;

forming a work-function material inside of said gate cavity and above said high-k dielectric material;

forming a semiconductor material above said work-function material to fill a remaining portion of said gate cavity, said semiconductor material comprising silicon; and

performing a material substitution process on said semiconductor material to substitute a replacement gate electrode material for at least a portion of said semiconductor material formed in said gate cavity.

15. The method of claim 14, wherein performing said material substitution process comprises forming a metal layer comprising said replacement gate electrode material above said semiconductor material, forming a trapping material layer above said metal layer, and thereafter performing a heat treatment process.

16. The method of claim 15, wherein forming said metal layer comprises forming a material layer comprising aluminum.

17. The method of claim 15, wherein forming said trapping material layer comprises forming a material layer comprising titanium.

18. The method of claim 15, wherein performing said heat treatment process comprises forming an alloy metal region above said metal layer, said alloy metal region comprising an alloy of said semiconductor material and material comprising said trapping material layer.

19. The method of claim 14, wherein performing said material substitution process comprises exposing said semiconductor material to a gaseous treatment ambient.

20. The method of claim 19, wherein said gaseous treatment ambient comprises tungsten hexafluoride and said replacement gate electrode material comprises tungsten.

21. The method of claim 14, wherein forming said semiconductor device comprises forming an interlayer dielectric material above said gate structure and planarizing said interlayer dielectric material to expose said dummy gate electrode.

22. The method of claim 21, wherein forming at least one of said high-k dielectric material, said work-function material and said semiconductor material comprises forming an excess portion of said at least one of said high-k dielectric material, said work-function material and said semiconductor material outside of said gate cavity and above said interlayer dielectric material.

23. The method of claim 22, further comprising performing a planarization process to remove said excess portion of said at least one of said high-k dielectric material, said work-function material and said semiconductor material from above said interlayer dielectric material prior to performing said material substitution process.

24. The method of claim 23, further comprising removing an upper portion of said work-function material formed inside of said gate cavity after performing said planarization process and prior to performing said material substitution process.

25. The method of claim 23, further comprising forming a recess in said gate structure after performing said planarization process and prior to performing said material substitution process, wherein forming said recess comprises removing upper portions of said work-function material and said semiconductor material formed inside of said gate cavity.

26. The method of claim 25, further comprising forming a dielectric cap material in said recess.

27. The method of claim 26, further comprising forming a contact opening in said interlayer dielectric material to expose at least a portion of one of a source region and a drain region of said semiconductor device and at least a portion of said dielectric cap material formed in said recess.