SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130264567A1
• Filed: 06/06/2013
• Published: 10/10/2013
• Est. Priority Date: 06/11/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, ENDO, Yuta
• Granted Patent: US 8,884,294 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An object of an embodiment of the present invention is to manufacture a highly-reliable semiconductor device comprising a transistor including an oxide semiconductor, in which change of electrical characteristics is small. In the transistor including an oxide semiconductor, oxygen-excess silicon oxide (SiO_X (X>2)) is used for a base insulating layer of a top-gate structure or for a protective insulating layer of a bottom-gate structure. By using the oxygen-excess silicon oxide, oxygen is discharged from the insulating layer, and oxygen deficiency of an oxide semiconductor layer and the interface state density between the oxide semiconductor layer and the base insulating layer or the protective insulating layer can be reduced, so that the highly-reliable semiconductor device in which change of electrical characteristics is small can be manufactured.

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating layer comprising silicon and oxygen over the substrate;

an oxide semiconductor layer on and in contact with the first insulating layer;

a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;

a second insulating layer over the oxide semiconductor layer, the source electrode and the drain electrode; and

a gate electrode over the second insulating layer,

wherein the number of oxygen atoms per unit volume of the first insulating layer is more than twice the number of silicon atoms per unit volume of the first insulating layer, and

wherein the gate electrode overlaps with the oxide semiconductor layer with the second insulating layer provided between the gate electrode and the oxide semiconductor layer.

2. The semiconductor device according to claim 1, wherein the number of silicon atoms and the number of oxygen atoms per unit volume of the first insulating layer are measured by Rutherford backscattering spectrometry.

3. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer comprises:

a channel region; and

a source region and a drain region that are obtained by reducing resistance of the oxide semiconductor layer, and

wherein the source region and the drain region are connected to the source electrode and the drain electrode, respectively.

4. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is dehydrated or dehydrogenated.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises at least one element selected from In, Ga, Sn, Zn, Al, Mg, Hf, and lanthanoid.

6. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode are formed between the second insulating layer and the oxide semiconductor layer.

7. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode are formed between the first insulating layer and the oxide semiconductor layer.

16. The semiconductor device according to claim 1, wherein the first insulating layer has a thickness greater than 100 nm.

17. The semiconductor device according to claim 1, wherein the oxide semiconductor layer has a charge density of 1×

10¹⁵ cm<sup>−

3</sup> or less.

18. The semiconductor device according to claim 1, wherein a channel length of the oxide semiconductor layer is greater than or equal to 0.1 μ

m and less than or equal to 0.5 μ

m.

19. The semiconductor device according to claim 1, wherein the oxide semiconductor layer is highly purified to be an i-type oxide semiconductor layer.

20. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises indium, zinc and a metal other than indium and zinc.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating layer comprising silicon and oxygen over a substrate;

forming an oxide semiconductor layer over the first insulating layer;

forming a source electrode and a drain electrode over the oxide semiconductor layer;

forming a second insulating layer over the source electrode and the drain electrode so that part of the second insulating layer is in contact with the oxide semiconductor layer; and

forming a gate electrode over the oxide semiconductor layer with the second insulating layer provided between the gate electrode and the oxide semiconductor layer,

wherein the number of oxygen atoms per unit volume of the first insulating layer is more than twice the number of silicon atoms per unit volume of the first insulating layer.

9. The method for manufacturing the semiconductor device according to claim 8, wherein the first insulating layer is formed by a sputtering method using a silicon target or a quartz target and using oxygen or a mixed gas of oxygen and argon.

10. The method for manufacturing the semiconductor device according to claim 8, wherein the number of silicon atoms and the number of oxygen atoms per unit volume of the first insulating layer are measured by Rutherford backscattering spectrometry.

11. The method for manufacturing the semiconductor device according to claim 8, wherein the oxide semiconductor layer comprises at least one element selected from In, Ga, Sn, Zn, Al, Mg, Hf, and lanthanoid.

12. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating layer comprising silicon and oxygen over a substrate;

forming a source electrode and a drain electrode over and in contact with the first insulating layer;

forming an oxide semiconductor layer over the source electrode and the drain electrode so that part of the oxide semiconductor layer is in contact with the first insulating layer;

forming a second insulating layer over the oxide semiconductor layer; and

forming a gate electrode over the oxide semiconductor layer with the second insulating layer provided between the gate electrode and the oxide semiconductor layer,

wherein the number of oxygen atoms per unit volume of the first insulating layer is more than twice the number of silicon atoms per unit volume of the first insulating layer.

13. The method for manufacturing the semiconductor device according to claim 12, wherein the first insulating layer is formed by a sputtering method using a silicon target or a quartz target and using oxygen or a mixed gas of oxygen and argon.

14. The method for manufacturing the semiconductor device according to claim 12, wherein the number of silicon atoms and the number of oxygen atoms per unit volume of the first insulating layer are measured by Rutherford backscattering spectrometry.

15. The method for manufacturing the semiconductor device according to claim 12, wherein the oxide semiconductor layer comprises at least one element selected from In, Ga, Sn, Zn, Al, Mg, Hf, and lanthanoid.