MULTIBAND RF SWITCH GROUND ISOLATION

• US 20130271224A1
• Filed: 06/06/2013
• Published: 10/17/2013
• Est. Priority Date: 04/20/2010
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Jones, David E., Jones, Paul D., Levesque, Chris, Southcombe, William David, Yoder, Scott, Stockert, Terry J., Puliafico, Anthony
• Granted Patent: US 9,553,550 B2
• Time in Patent Office: Days
• US Class Current: 330/296
• CPC Class Codes: H03F 1/0227 using supply converters
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/171 A filter circuit coupled to the output of an amplifier
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/27 A biasing circuit node being switched in an amplifier circuit
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/336 A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/414 A switch being coupled in the output circuit of an amplifier to switch the output on/off
• CPC Class Codes: H03F 2200/417 A switch coupled in the output circuit of an amplifier being controlled by a circuit
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/504 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
• CPC Class Codes: H03F 2200/534 Transformer coupled at the input of an amplifier
• CPC Class Codes: H03F 2200/537 A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2203/21106 An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
• CPC Class Codes: H03F 2203/21142 Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 2203/21157 A filter circuit being added at the output of a power amplifier stage
• CPC Class Codes: H03F 3/19 : with semiconductor devices only
• CPC Class Codes: H03F 3/191 : Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03F 3/193 : with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/211 : using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 : with semiconductor devices only
• CPC Class Codes: H03F 3/602 : Combinations of several amplifiers
• CPC Class Codes: H03F 3/68 : Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

A radio frequency (RF) switch semiconductor die and an RF supporting structure are disclosed. The RF switch semiconductor die is attached to the RF supporting structure. The RF switch semiconductor die has a first edge and a second edge, which may be opposite from the first edge. The RF supporting structure has a group of alpha supporting structure connection nodes, which is adjacent to the first edge; a group of beta supporting structure connection nodes, which is adjacent to the second edge; and an alpha AC grounding supporting structure connection node, which is adjacent to the second edge. When the group of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the group of beta supporting structure connection nodes are inactive.

Claims

1. Circuitry comprising:

a radio frequency (RF) switch semiconductor die attached to an RF supporting structure and having a first edge and a second edge; and

the RF supporting structure having;

a plurality of alpha supporting structure connection nodes disposed on the RF supporting structure adjacent to the first edge;

a plurality of beta supporting structure connection nodes disposed on the RF supporting structure adjacent to the second edge; and

an alpha alternating current (AC) grounding supporting structure connection node disposed on the RF supporting structure adjacent to the second edge,

wherein when the plurality of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the plurality of beta supporting structure connection nodes are inactive.

2. The circuitry of claim 1 wherein the RF supporting structure further has a beta AC grounding supporting structure connection node disposed on the RF supporting structure adjacent to the first edge, such that when the plurality of beta supporting structure connection nodes and the beta AC grounding supporting structure connection node are active, the plurality of alpha supporting structure connection nodes are inactive.

3. The circuitry of claim 1 wherein when the plurality of beta supporting structure connection nodes are active, the plurality of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are inactive.

4. The circuitry of claim 1 wherein the second edge is about opposite from the first edge.

5. The circuitry of claim 1 wherein the second edge is disposed about 90 degrees from the first edge.

6. The circuitry of claim 1 wherein the second edge is any edge other than the first edge.

7. The circuitry of claim 1 wherein the RF supporting structure is a laminate.

8. The circuitry of claim 1 wherein the RF supporting structure comprises alpha switching circuitry and beta switching circuitry.

9. The circuitry of claim 8 wherein the alpha switching circuitry comprises an alpha AC grounding capacitive element.

10. The circuitry of claim 9 wherein the alpha AC grounding capacitive element is coupled between the alpha AC grounding supporting structure connection node and a ground.

11. The circuitry of claim 9 wherein the RF supporting structure further has a beta AC grounding supporting structure connection node disposed on the RF supporting structure adjacent to the first edge, such that when the plurality of beta supporting structure connection nodes and the beta AC grounding supporting structure connection node are active, the plurality of alpha supporting structure connection nodes are inactive.

12. The circuitry of claim 11 wherein the beta switching circuitry comprises a beta AC grounding capacitive element.

13. The circuitry of claim 12 wherein the alpha AC grounding capacitive element is coupled between the alpha AC grounding supporting structure connection node and a ground, and the beta AC grounding capacitive element is coupled between the beta AC grounding supporting structure connection node and the ground.

14. The circuitry of claim 1 wherein the RF switch semiconductor die further has a plurality of alpha switch die connection nodes, a plurality of beta switch die connection nodes, and an alpha AC grounding switch die connection node.

15. The circuitry of claim 14 wherein:

each of the plurality of alpha supporting structure connection nodes is coupled to a corresponding one of the plurality of alpha switch die connection nodes;

each of the plurality of beta supporting structure connection nodes is coupled to a corresponding one of the plurality of beta switch die connection nodes; and

the alpha AC grounding supporting structure connection node is coupled to the alpha AC grounding switch die connection node.

16. The circuitry of claim 14 wherein the RF switch semiconductor die comprises a plurality of alpha shunt switching devices and a plurality of beta shunt switching devices.

17. The circuitry of claim 16 wherein:

each of the plurality of alpha shunt switching devices is coupled to a corresponding one of the plurality of alpha switch die connection nodes;

each of the plurality of beta shunt switching devices is coupled to a corresponding one of the plurality of beta switch die connection nodes; and

each of the plurality of alpha shunt switching devices is coupled to the alpha AC grounding switch die connection node.

18. The circuitry of claim 1 further comprising:

a first RF power amplifier (PA) comprising;

a first non-quadrature PA path having a first single-ended output; and

a first quadrature PA path coupled between the first non-quadrature PA path and an antenna port, such that the first quadrature PA path has a first single-ended input, which is coupled to the first single-ended output; and

a second RF PA comprising a second quadrature PA path coupled to the antenna port,

wherein the antenna port is configured to be coupled to an antenna.

19. The circuitry of claim 1 further comprising a first multi-mode multi-band quadrature RF power amplifier (PA) coupled to multi-mode multi-band alpha switching circuitry via a single alpha PA output, such that the RF switch semiconductor die comprises the multi-mode multi-band alpha switching circuitry having:

a first alpha non-linear mode output associated with a first non-linear mode RF communications band; and

a plurality of alpha linear mode outputs, such that each of the plurality of alpha linear mode outputs is associated with a corresponding one of a first plurality of linear mode RF communications bands.

20. The circuitry of claim 1 further comprising:

a first RF power amplifier (PA) comprising a first final stage having a first final bias input, such that bias of the first final stage is via the first final bias input;

PA control circuitry;

a PA-digital communications interface (DCI) coupled between a digital communications bus and the PA control circuitry; and

a final stage current digital-to-analog converter (IDAC) coupled between the PA control circuitry and the first final bias input.

21. The circuitry of claim 1 further comprising:

a first RF power amplifier (PA) having a first final stage and adapted to;

receive and amplify a first RF input signal to provide a first RF output signal; and

receive a first final bias signal to bias the first final stage;

PA bias circuitry adapted to receive a bias power supply signal and provide the first final bias signal based on the bias power supply signal; and

a direct current (DC)-DC converter adapted to receive a DC power supply signal from a DC power supply and provide the bias power supply signal based on the DC power supply signal, such that a voltage of the bias power supply signal is greater than a voltage of the DC power supply signal.

22. The circuitry of claim 1 further comprising:

a direct current (DC)-DC converter comprising;

a power amplifier (PA) envelope power supply comprising a charge pump buck converter coupled to RF PA circuitry; and

a PA bias power supply comprising a charge pump coupled to the RF PA circuitry; and

the RF PA circuitry.

23. The circuitry of claim 1 further comprising:

multi-mode multi-band RF power amplification circuitry having at least a first RF input and a plurality of RF outputs, such that;

configuration of the multi-mode multi-band RF power amplification circuitry associates one of the at least the first RF input with one of the plurality of RF outputs; and

the configuration is associated with at least a first look-up table (LUT);

power amplifier (PA) control circuitry coupled between the multi-mode multi-band RF power amplification circuitry and a PA-digital communications interface (DCI), such that the PA control circuitry has at least the first LUT, which is associated with at least a first defined parameter set; and

the PA-DCI, which is coupled to a digital communications bus.

24. A method comprising:

providing a radio frequency (RF) switch semiconductor die attached to an RF supporting structure and having a first edge and a second edge; and

providing the RF supporting structure having;

a plurality of alpha supporting structure connection nodes disposed on the RF supporting structure adjacent to the first edge;

a plurality of beta supporting structure connection nodes disposed on the RF supporting structure adjacent to the second edge; and

an alpha alternating current (AC) grounding supporting structure connection node disposed on the RF supporting structure adjacent to the second edge,

wherein when the plurality of alpha supporting structure connection nodes and the alpha AC grounding supporting structure connection node are active, the plurality of beta supporting structure connection nodes are inactive.