VERTICAL TOPOLOGY LIGHT EMITTING DEVICE
First Claim
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1. A light emitting device, comprising:
- a support structure;
a first adhesion layer disposed on the support structure, the first adhesion layer comprising Au;
a second adhesion layer disposed on the first adhesion layer;
a first metal layer disposed on the second adhesion layer;
a second metal layer disposed on the first metal layer, the second metal layer comprising Ti;
a GaN-based semiconductor structure disposed on the second metal layer;
an interface layer disposed on the GaN-based semiconductor structure; and
a contact pad disposed on the interface layer,wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure.
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Abstract
A vertical topology light emitting device comprises a support structure, a first adhesion layer, a second adhesion layer, a first metal layer, a second metal layer comprising a portion which directly contacts a GaN-based semiconductor structure, an interface layer, and a contact pad.
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20 Claims
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1. A light emitting device, comprising:
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a support structure; a first adhesion layer disposed on the support structure, the first adhesion layer comprising Au; a second adhesion layer disposed on the first adhesion layer; a first metal layer disposed on the second adhesion layer; a second metal layer disposed on the first metal layer, the second metal layer comprising Ti; a GaN-based semiconductor structure disposed on the second metal layer; an interface layer disposed on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light emitting device, comprising:
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a support structure; an adhesion structure disposed on the support structure; a first metal layer disposed on the adhesion structure; a second metal layer disposed on the first metal layer, the second metal layer comprising Ti; and a GaN-based semiconductor structure disposed on the adhesion structure, wherein the second metal layer comprises a portion which directly contacts the GaN-based semiconductor structure, and wherein the second metal layer serves as an n-type electrode to the GaN-based semiconductor structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification