ROTATING RECTIFIER ASSEMBLY BUS BAR

• US 20130308291A1
• Filed: 05/15/2012
• Published: 11/21/2013
• Est. Priority Date: 05/15/2012
• Status: Active Grant

• Current Assignee: Hamilton Sundstrand Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Original Assignee: Hamilton Sundstrand Corporation (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Pal, Debabrata
• Granted Patent: US 9,257,886 B2
• Time in Patent Office: Days
• US Class Current: 361/820
• CPC Class Codes: H01L 24/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 29/00 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor H01L31/00 - H01L33/00, H10K10/00, H10N take precedence; details other than of semiconductor bodies or of electrodes thereof H01L23/00; devices consisting of a plurality of solid state components formed in or on a common substrate H01L27/00
• CPC Class Codes: H02K 11/00 Structural association of dynamo-electric machines with electric components or with devices for shielding, monitoring or protection casings, enclosures or supports H02K5/00
• CPC Class Codes: H02K 11/042 Rectifiers associated with rotating parts, e.g. rotor cores or rotary shafts
• CPC Class Codes: H02K 19/38 Structural association of synchronous generators with exciting machines
• CPC Class Codes: H02K 29/00 Motors or generators having non-mechanical commutating devices, e.g. discharge tubes or semiconductor devices
• CPC Class Codes: H02M 7/06 using discharge tubes without control electrode or semiconductor devices without control electrode
• CPC Class Codes: H05K 7/02 Arrangements of circuit components or wiring on supporting structure

Abstract

A rectifier assembly includes a diode pack. A bus bar includes a first layer electrically connected to the diode pack. The first layer has a first yield strength and a first coefficient of thermal expansion. A second layer of copper is joined to the first layer and includes a second yield strength less than the first yield strength. In one example, the second layer has a second coefficient of thermal expansion within 5% of the first coefficient of thermal expansion.

Claims

1. A rectifier assembly comprising:

a diode pack;

a bus bar including a first layer electrically connected to the diode pack, the first layer having a first yield strength and a first coefficient of thermal expansion, and a second layer of copper joined to the first layer and including second yield strength less than the first yield strength.

2. The rectifier assembly according to claim 1, wherein the second layer has a second coefficient of thermal expansion within 5% of the first coefficient of thermal expansion.

3. The rectifier assembly according to claim 2, wherein the first layer is beryllium copper.

4. The rectifier assembly according to claim 1, wherein the second layer is either brazed or adhered to the first layer.

5. The rectifier assembly according to claim 4, wherein the second layer is secured to one side of the first layer.

6. The rectifier assembly according to claim 5, wherein the second layer surrounds a perimeter of the first layer.

7. The rectifier assembly according to claim 1, wherein the first and second layers respectively include first and second thicknesses, the second thickness lesser than the first thickness.

8. The rectifier assembly according to claim 7, wherein the thickness of the second layer is at least one-quarter of the thickness of the first layer.

9. The rectifier assembly according to claim 1, wherein the second layer has a length that is less than a length of the bus bar.

10. The rectifier assembly according to claim 9, wherein the first layer includes undulations on opposing ends, the length provided between the undulations.

11. The rectifier assembly according to claim 1, comprising a crescent, wherein the diode pack is supported by the crescent.

12. The rectifier assembly according to claim 11, comprising a housing including first and second housing portions, the crescent arranged between the first and second housing portions.

13. The rectifier assembly according to claim 12, comprising a pin extending through the housing and a hole in the crescent.

14. A bus bar comprising:

a bus bar including a first layer electrically connected to the diode pack, the first layer having a first yield strength and a first coefficient of thermal expansion, and a second layer of copper joined to the first layer and including second yield strength less than the first yield strength and a second coefficient of thermal expansion within 5% of the first coefficient of thermal expansion.

15. The bus bar according to claim 14, wherein the first layer is beryllium copper.

16. The bus bar according to claim 15, wherein the second layer is either brazed or adhered to the first layer.

17. The bus bar according to claim 15, wherein the first and second layers respectively include first and second thicknesses, the first thickness greater than the second thickness, the thickness of the second layer is at least one-quarter of the thickness of the first layer.

18. The bus bar according to claim 15, wherein the second layer surrounds a perimeter of the first layer and arranged as a rotor winding.

19. The bus bar according to claim 15, wherein the second layer is secured to one side of the first layer.

20. The bus bar according to claim 15, wherein the second layer has a length that is less than a length of the bus bar, wherein the bus bar includes undulations on opposing ends, the length provided between the undulations.