SEMICONDUCTOR PROCESS
First Claim
1. A semiconductor process, comprising:
- forming a gate structure on a substrate;
forming a main spacer on the substrate beside the gate structure;
forming a source/drain in the substrate beside the main spacer;
removing the main spacer;
forming an epitaxial spacer on the substrate beside the gate structure; and
forming an epitaxial structure in the substrate beside the gate structure after the source/drain is formed.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor process includes the following steps. A gate structure is formed on a substrate. A main spacer is formed on the substrate beside the gate structure. A source/drain is formed in the substrate beside the main spacer. After the source/drain is formed, an epitaxial structure is formed in the substrate beside the main spacer. A gate structure may be respectively formed in a first area and a second area of a substrate. A main spacer is formed on the substrate respectively beside the two gate structures. A source/drain is formed in the substrate respectively beside the two spacers. After the two source/drains are formed, an epitaxial structure is formed in the substrate respectively beside the main spacers.
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Citations
22 Claims
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1. A semiconductor process, comprising:
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forming a gate structure on a substrate; forming a main spacer on the substrate beside the gate structure; forming a source/drain in the substrate beside the main spacer; removing the main spacer; forming an epitaxial spacer on the substrate beside the gate structure; and forming an epitaxial structure in the substrate beside the gate structure after the source/drain is formed. - View Dependent Claims (2, 3, 4, 5, 6, 8, 9, 10, 21)
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7. (canceled)
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11. A semiconductor process, comprising:
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forming a gate structure in a first area and a second area of a substrate respectively; forming a main spacer on the substrate beside the two gate structures respectively; forming a source/drain in the substrate beside the two main spacers respectively; removing the two main spacers; form an epitaxial spacer on the substrate beside the two gate structures respectively; and forming an epitaxial structure in the substrate beside the two epitaxial spacers respectively after the two source/drains are formed. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 20, 22)
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19. (canceled)
Specification