THIN-FILM LED WITH P AND N CONTACTS ELECTRICALLY ISOLATED FROM THE SUBSTRATE

• US 20130328093A1
• Filed: 08/13/2013
• Published: 12/12/2013
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Toshiba Techno Center Inc. (Toshiba Corporation)
• Inventors: Lin, Chao-Kun
• Granted Patent: US 9,142,742 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 2933/0075 relating to heat extraction or cooling elements
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements

Abstract

A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Claims

1-14. -14. (canceled)

15. A thin-film light emitting diode, comprising:

a substrate;

a conductive adhesive layer formed on the substrate;

a reflective electrode formed on the conductive adhesive layer, wherein the conductive adhesive layer and the electrode are metal and together form a metallic current spreading layer;

a pad contact formed on the metallic current spreading layer for a bonding wire; and

an epitaxial structure on the reflective electrode, the epitaxial structure comprising a first epitaxial layer, a second epitaxial layer, and an active region between the first epitaxial layer and the second epitaxial layer,

wherein a part of the epitaxial structure is removed so as to expose a surface of the metallic current spreading layer and a side wall of the first epitaxial layer, the active region and the second epitaxial layer to form a mesa with the epitaxial structure and the metallic current spreading layer.

16. The thin-film light emitting diode of claim 15, wherein the metallic current spreading layer has a thickness greater than about 1 μ

m.

17. The thin-film light emitting diode of claim 15, wherein the substrate is transparent for the wavelengths between about 300 nm and 700 nm with a transmittance greater than about 50%.

18. The thin-film light emitting diode of claim 15, wherein the substrate is reflective for the wavelength between about 300 nm and 700 nm with a reflectance greater than about 50%.

19. The thin film light emitting diode of claim 15, wherein the first epitaxial layer has a roughened surface with micro-structures, the micro-structures being between about 100 nm and 500 nm in size.

20. The thin-film light emitting diode of claim 15, wherein the first epitaxial layer is an n-type GaN-based layer and the second epitaxial layer is a p-type GaN-based layer.

21. The thin-film light emitting diode of claim 15, further comprising a patterned second electrode is on the first epitaxial layer.

22. The thin-film light emitting diode of claim 21, wherein the patterned second electrode is on a top surface of the mesa.

23. The thin-film light emitting diode of claim 15, wherein the substrate is not an original growth substrate for the epitaxial structure.