INDUCTOR DEVICE AND FABRICATION METHOD

• US 20130328163A1
• Filed: 11/30/2012
• Published: 12/12/2013
• Est. Priority Date: 06/06/2012
• Status: Active Grant

• Current Assignee: Semiconductor Manufacturing International Corporation
• Original Assignee: Semiconductor Manufacturing International Corporation
• Inventors: CHENG, JENHAO, WANG, XINING, LIU, LING
• Granted Patent: US 8,866,259 B2
• Time in Patent Office: Days
• US Class Current: 257/531
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Various embodiments provide inductor devices and fabrication methods. In one embodiment, an inductor device can include a first dielectric layer disposed on a semiconductor substrate; a first planar spiral wiring disposed on the first dielectric layer, and optionally one or more second planar spiral wirings disposed over the first planar spiral wiring. Each of the first and the optional second planar spiral wirings can include a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring. The second spiral metal wiring can include at least two sub-metal-lines isolated with one another.

Claims

1. An inductor device comprising:

a semiconductor substrate;

a dielectric layer disposed on the semiconductor substrate;

a planar spiral wiring disposed on the dielectric layer, the planar spiral wiring including a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, wherein the second spiral metal wiring includes at least two sub-metal-lines isolated with one another;

a first contact layer disposed on the dielectric layer and connected to a second end of the first spiral metal wiring; and

a second contact layer coupled to the at least two sub-metal-lines such that the at least two sub-metal-lines are in a parallel configuration.

2. The device of claim 1, wherein the at least two sub-metal-lines include about 2 to about 10 isolated sub-metal-lines and the first spiral metal wiring includes about 1 to about 10 isolated sub-metal-lines.

3. The device of claim 1, wherein adjacent sub-metal-lines of the at least two sub-metal-lines have a distance of about 0.001 μ

m to about 100 μ

m, and wherein each of the at least two sub-metal-lines has a width of about 0.001 μ

m to about 100 μ

m.

4. The device of claim 1, wherein the planar spiral wiring is made of a material including copper or aluminum and wherein the planar spiral wiring has a shape selected from a quadrilateral, hexagonal, octagonal or circular shape.

5. The device of claim 1, wherein the planar spiral wiring has a thickness of about 0.05 μ

m to about 10 μ

m and an inner radius of about 5 μ

m to about 200 μ

m.

6. The device of claim 1, wherein the second contact layer is disposed on the dielectric layer.

7. The device of claim 1, wherein the planar spiral wiring is made of copper and has a thickness of about 3 μ

m to about 4 μ

m and wherein the first spiral metal wiring is made by a single wire.

8. An inductor device comprising:

a semiconductor substrate;

a first dielectric layer disposed on the semiconductor substrate;

a first planar spiral wiring disposed on the first dielectric layer;

one or more second planar spiral wirings disposed over the first planar spiral wiring, wherein each of the first and the one or more second planar spiral wirings includes a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring, the second spiral metal wiring includes at least two sub-metal-lines isolated with one another, and the first spiral metal wiring includes at least one sub-metal-line;

a second dielectric layer disposed between adjacent layers of the first and the one or more second planar spiral wirings; and

a conductive plug disposed through an entire thickness of the second dielectric layer to connect the adjacent layers of the first and the one or more second planar spiral wirings such that the first planar spiral wiring is configured in series with the one or more second planar spiral wirings.

9. The device of claim 8, wherein an inner sub-metal-line of one of the first and the one or more second spiral metal wirings is connected to an outer sub-metal-line of an adjacent spiral metal wiring.

10. The device of claim 8, further comprising a contact layer disposed on the second dielectric layer on a top layer of the one or more second spiral metal wirings, the top layer including the outmost spiral metal wiring connected to the contact layer.

11. The device of claim 8, wherein the at least two insolated sub-metal-lines of the second spiral metal wiring include about 2 to about 10 isolated sub-metal-lines, and wherein the at least one sub-metal-line of the first spiral metal wiring includes about 1 to about 10 isolated sub-metal-lines.

12. The device of claim 8, wherein a distance between adjacent sub-metal-lines in each of the first and the one or more second spiral metal wirings is about 0.001 μ

m to about 100 μ

m, and wherein each sub-metal-line has a width of about 0.001 μ

m to about 100 μ

m.

13. The device of claim 8, wherein each of the first and the one or more second spiral metal wirings is made of a material including copper or aluminum and wherein the planar spiral wiring has a shape selected from a quadrilateral, hexagonal, octagonal or circular shape.

14. The device of claim 8, wherein each of the first and the one or more second spiral metal wirings has a thickness of about 0.05 μ

m to about 10 μ

m and an inner radius of about 5 μ

m to about 200 μ

m.

15. The device of claim 8, wherein each of the first and the one or more second spiral metal wirings is made of copper and have a thickness of about 3 μ

m to about 4 μ

m and wherein the first spiral metal wiring is made of a single wire.

16. A method of forming an inductor device comprising:

providing a semiconductor substrate;

forming a first dielectric layer on the semiconductor substrate; and

forming a first planar spiral wiring on the first dielectric layer,

wherein the first planar spiral wiring includes a first spiral metal wiring and a second spiral metal wiring connected to a first end of the first spiral metal wiring, the second spiral metal wiring includes at least two sub-metal-lines isolated with one another, and the first spiral metal wiring includes at least one sub-metal-line.

17. The method of claim 16, further comprising:

forming a first contact layer on the first dielectric layer to connect with a second end of the first spiral metal wiring; and

forming a second contact layer on the first dielectric layer, wherein the at least two sub-metal-lines are connected to the second contact layer.

18. The method of claim 16, further comprising:

forming one or more second planar spiral wirings over the first planar spiral wiring, wherein each second planar spiral wiring includes a first spiral metal wiring and a second spiral metal wiring connected to the first spiral metal wiring, the second spiral metal wiring includes at least two sub-metal-lines isolated with one another, and the first spiral metal wiring includes at least one sub-metal-line;

forming a second dielectric layer between adjacent layers of the first and the one or more second planar spiral wirings; and

forming a conductive plug through an entire thickness of the second dielectric layer to connect the adjacent layers of the first and the one or more second planar spiral wirings such that the first planar spiral wiring is configured in series with the one or more second planar spiral wirings.

19. The method of claim 18, wherein an inner sub-metal-line of one of the first and the one or more second spiral metal wirings is connected to an outer sub-metal-line of an adjacent spiral metal wiring.

20. The method of claim 18, further comprising forming a contact layer on the second dielectric layer formed on a top layer of the one or more second spiral metal wirings, wherein the top layer includes an outmost spiral metal wiring connected to the contact layer.