APPARATUSES AND METHODS TO MODIFY PILLAR POTENTIAL
First Claim
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1. A method comprising:
- performing a first operation on a first charge storage device in a block of charge storage devices, some of the charge storage devices in the block being associated with a pillar comprising semiconductor material;
inducing drain leakage current in a select gate transistor of the pillar to modify an electrical potential of the pillar; and
performing a second operation on a second charge storage device in the block of charge storage devices.
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Abstract
Apparatus are disclosed, such as a block including a number of strings of charge storage devices, each string including a number of charge storage devices associated with a pillar, and each pillar including semiconductor material. Methods are disclosed, such as a method that includes performing a first operation on a first charge storage device associated with a pillar in the block, modifying an electrical potential of the pillar, and performing a second operation on a second charge storage device in the block. Additional apparatus and methods are described.
7 Citations
36 Claims
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1. A method comprising:
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performing a first operation on a first charge storage device in a block of charge storage devices, some of the charge storage devices in the block being associated with a pillar comprising semiconductor material; inducing drain leakage current in a select gate transistor of the pillar to modify an electrical potential of the pillar; and performing a second operation on a second charge storage device in the block of charge storage devices. - View Dependent Claims (2, 3, 4, 5)
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6. An apparatus comprising:
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a string of charge storage devices comprising a plurality of charge storage devices and a select gate transistor associated with a pillar comprising semiconductor material; a cap comprising semiconductor material and coupled to the pillar to form a p-n junction between the cap and the pillar; a plurality of access lines associated with the string; and a circuit coupled to the cap to selectively cause drain leakage current to be induced in the select gate transistor to modify an electrical potential of the pillar. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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performing a first read operation on a charge storage device in a block of charge storage devices, each of the charge storage devices in the block being associated with a respective one of a plurality of pillars, each pillar comprising semiconductor material; inducing drain leakage current in a select gate transistor of a selected one of the pillars to modify an electrical potential of the selected pillar; and performing a second read operation on a charge storage device in the block of charge storage devices. - View Dependent Claims (16, 17, 18, 19)
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20. A method comprising:
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performing a first operation on a selected charge storage device in a block of charge storage devices, some of the charge storage devices in the block being associated with a pillar comprising semiconductor material; lowering an electrical potential of the pillar; and performing a read operation on the selected charge storage device in the block of charge storage devices. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A method comprising:
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performing a read operation on a charge storage device in a block of charge storage devices, some of the charge storage devices in the block being associated with a respective one of a plurality of pillars, each pillar comprising semiconductor material; inducing drain leakage current in a select gate transistor of a selected one of the pillars to raise an electrical potential of the selected pillar; and performing an erase operation on a charge storage device in the block of charge storage devices. - View Dependent Claims (27, 28, 29, 30, 31)
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32. A method comprising:
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performing a programming operation on a charge storage device in a block of charge storage devices, some of the charge storage devices in the block being associated with a respective one of a plurality of pillars, each pillar comprising semiconductor material; inducing drain leakage current in a select gate transistor of a selected one of the pillars to modify an electrical potential of the selected pillar; and performing a program verify operation on the charge storage device. - View Dependent Claims (33, 34, 35, 36)
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Specification