CIRCUITS, DEVICES, METHODS AND APPLICATIONS RELATED TO SILICON-ON-INSULATOR BASED RADIO-FREQUENCY SWITCHES

  • US 20140009214A1
  • Filed: 07/06/2013
  • Published: 01/09/2014
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
Patent Images

1. A radio-frequency (RF) switch comprising:

  • a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body; and

    a compensation network including a gate-coupling circuit that couples the gates of each pair of neighboring FETs, the compensation network further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs.

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