OPTICAL FILTER AND SENSOR SYSTEM

• US 20140014838A1
• Filed: 07/16/2013
• Published: 01/16/2014
• Est. Priority Date: 07/16/2012
• Status: Active Grant

• Current Assignee: Viavi Solutions, Inc. (Lumentum Holdings Inc.)
• Original Assignee: Richard A. Bradley Jr
• Inventors: Hendrix, Karen Denise, Bradley, Richard A. Jr., Grigonis, Marius
• Granted Patent: US 9,354,369 B2
• Time in Patent Office: Days
• US Class Current: 250/338.1
• CPC Class Codes: C23C 14/08 Oxides C23C14/10 takes precedence
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/548 Controlling the composition
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: G01J 5/0802 Optical filters
• CPC Class Codes: G02B 1/11 Anti-reflection coatings
• CPC Class Codes: G02B 1/115 Multilayers
• CPC Class Codes: G02B 5/207 comprising semiconducting materials
• CPC Class Codes: G02B 5/281 designed for the infrared light
• CPC Class Codes: G02B 5/285 comprising deposited thin solid films G02B5/281 - G02B5/289 take precedence; multilayered film filters for fibre optic multiplexing G02B6/29361
• CPC Class Codes: G06V 40/20 Movements or behaviour, e.g. gesture recognition recognition of facial expressions G06V40/16
• CPC Class Codes: H04N 13/254 in combination with electromagnetic radiation sources for illuminating objects
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm is provided. The optical filter includes a filter stack formed of hydrogenated silicon layers and lower-refractive index layers stacked in alternation. The hydrogenated silicon layers each have a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm.

Claims

1. An optical filter having a passband at least partially overlapping with a wavelength range of 800 nm to 1100 nm, comprising:

a filter stack including;

a plurality of hydrogenated silicon layers each having a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm; and

a plurality of lower-refractive-index layers each having a refractive index of less than 3 over the wavelength range of 800 nm to 1100 nm, stacked in alternation with the plurality of hydrogenated silicon layers.

2. The optical filter of claim 1, wherein the hydrogenated silicon layers each have a refractive index of greater than 3.6 at a wavelength of 830 nm.

3. The optical filter of claim 1, wherein the hydrogenated silicon layers each have a refractive index of greater than 3.5 over the wavelength range of 800 nm to 1100 nm.

4. The optical filter of claim 1, wherein the hydrogenated silicon layers each have an absorption coefficient of less than 0.0004 over the wavelength range of 800 nm to 1100 nm.

5. The optical filter of claim 1, wherein the lower-refractive-index layers each have a refractive index of less than 2.5 over the wavelength range of 800 nm to 1100 nm.

6. The optical filter of claim 1, wherein the lower-refractive-index layers are composed of silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), titanium dioxide (TiO₂), niobium pentoxide (Nb₂O₅), tantalum pentoxide (Ta₂O₅), or a mixture thereof.

7. The optical filter of claim 1, wherein the optical filter has a transmittance level, within the passband, of greater than 90% over the wavelength range of 800 nm to 1100 nm.

8. The optical filter of claim 1, wherein the optical filter has a blocking level, outside of the passband, of greater than OD2 over a wavelength range of 400 nm to 1100 nm.

9. The optical filter of claim 1, wherein the optical filter is a long-wavelength-pass edge filter, and wherein the passband has an edge wavelength in the wavelength range of 800 nm to 1100 nm.

10. The optical filter of claim 1, wherein the optical filter is a bandpass filter, and wherein the passband has a center wavelength in the wavelength range of 800 nm to 1100 nm.

11. The optical filter of claim 10, wherein the passband has a full width at half maximum (FWHM) of less than 50 nm.

12. The optical filter of claim 10, wherein the center wavelength shifts by less than 20 nm in magnitude with a change in angle of incidence from 0°

to 30°

.

13. The optical filter of claim 1, further comprising:

a substrate, wherein the filter stack is disposed on a first surface of the substrate; and

an antireflective (AR) coating disposed on a second surface of the substrate opposite the first surface.

14. The optical filter of claim 13, wherein the optical filter has a total coating thickness of less than 10 μ

m.

15. The optical filter of claim 1, forming part of a sensor system including a light source for emitting light at an emission wavelength within the passband of the optical filter, and a sensor for detecting the emitted light, wherein the optical filter receives the emitted light from the light source and transmits the emitted light to the sensor.

16. A sensor system comprising:

a light source for emitting light at an emission wavelength in a wavelength range of 800 nm to 1100 nm;

an optical filter having a passband including the emission wavelength and at least partially overlapping with the wavelength range of 800 nm to 1100 nm, disposed to receive the emitted light, for transmitting the emitted light, comprising;

a filter stack including;

a plurality of hydrogenated silicon layers each having a refractive index of greater than 3 over the wavelength range of 800 nm to 1100 nm and an extinction coefficient of less than 0.0005 over the wavelength range of 800 nm to 1100 nm; and

a plurality of lower-refractive-index layers each having a refractive index of less than 3 over the wavelength range of 800 nm to 1100 nm, stacked in alternation with the plurality of hydrogenated silicon layers; and

a sensor, disposed to receive the emitted light after transmission by the optical filter, for detecting the emitted light.

17. The sensor system of claim 16, wherein the optical filter is disposed on the sensor.

18. The sensor system of claim 16, wherein the sensor system is a proximity sensor system, wherein the light source is for emitting light towards a target, wherein the optical filter is disposed to receive the emitted light after reflection by the target, and wherein the sensor is a proximity sensor for detecting the emitted light to sense a proximity of the target.

19. The sensor system of claim 16, wherein the sensor system is a three-dimensional (3D) imaging system, wherein the light source is for emitting light towards a target, wherein the optical filter is disposed to receive the emitted light after reflection by the target, and wherein the sensor is a 3D image sensor for detecting the emitted light to provide a 3D image of the target.

20. The sensor system of claim 19, wherein the 3D imaging system is a gesture-recognition system, and wherein the target is a user of the gesture-recognition system, further comprising a processing system for processing the 3D image of the user to recognize a gesture of the user.