SEMICONDUCTOR COMPONENT HAVING THROUGH-SILICON VIAS AND METHOD OF MANUFACTURE

• US 20140015146A1
• Filed: 09/23/2013
• Published: 01/16/2014
• Est. Priority Date: 04/13/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: YU, Chen-Hua, CHANG, Cheng-Hung, LIAO, Ebin, YU, Chia-Lin, WANG, Hsiang-Yi, CHANG, Chun Hua, HUANG, Li-Hsien, KUO, Darryl, WU, Tsang-Jiuh, CHIOU, Wen-Chih
• Granted Patent: US 9,418,923 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76844 Bottomless liners
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06544 Design considerations for via connections, e.g. geometry or layout
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/5383 Multilayer substrates H01L23/5385 takes precedence; multilayer metallisation on monolayer substrates H01L23/538
• CPC Class Codes: H01L 23/5384 Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 25/043 Stacked arrangements of devices
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/115 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.

Claims

1. A semiconductor component comprising:

a semiconductor substrate having an opening;

a first dielectric liner having a first stress disposed over an interior surface of the opening;

a second dielectric liner having a second stress disposed over the first dielectric liner, wherein a direction of the first stress is opposite a direction of the second stress; and

a conductive material disposed over the second dielectric liner.

2. The semiconductor component of claim 1, wherein the first dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness.

3. The semiconductor component of claim 2, wherein the first thickness ranges from about 200 Angstroms (Å

) to about 2000 Å

, and the second thickness ranges from about 20 Å

to about 200 Å

.

4. The semiconductor component of claim 1, wherein the second dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness.

5. The semiconductor component of claim 4, wherein the first thickness ranges from about 500 Å

to about 2500 Å

, and the second thickness ranges from about 500 Å

to about 2500 Å

.

6. The semiconductor component of claim 1, further comprising a third dielectric liner between the second dielectric liner and the conductive material, the third dielectric liner having a third stress in a same direction as the first stress, wherein the third dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness.

7. The semiconductor component of claim 6, wherein the first thickness ranges from about 500 Å

to about 2500 Å

, and the second thickness ranges from about 500 Å

to about 2500 Å

.

8. A semiconductor component comprising:

a semiconductor substrate having an opening;

a first dielectric liner disposed over an interior surface of the opening, the first dielectric liner having a first etching rate in an HF solution;

a second dielectric liner disposed over the first dielectric liner, the second dielectric liner having a second etching rate in the HF solution, wherein the first etching rate is different from the second etching rate; and

a conductive material disposed over the second dielectric liner.

9. The semiconductor component of claim 8, wherein the first dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness.

10. The semiconductor component of claim 9, wherein a ratio of the first thickness to the second thickness ranges from about 5 to about 20.

11. The semiconductor component of claim 8, wherein the second dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, wherein a ratio of the first thickness to the second thickness ranges from about 1 to about 5.

12. The semiconductor component of claim 8, further comprising a third dielectric liner between the second dielectric liner and the conductive material, wherein the third dielectric liner has a first thickness adjacent to a top surface of the substrate and a second thickness adjacent to a bottom surface of the substrate, and the first thickness is different from the second thickness.

13. The semiconductor component of claim 12, wherein a ratio of the first thickness to the second thickness ranges from about 5 to about 20.

14. A semiconductor component comprising:

a semiconductor substrate having an opening, wherein the opening has a top portion and a bottom portion;

a first dielectric liner disposed over an interior surface of the opening, the first dielectric liner having a thickness T₁ on the top portion and a thickness T₂ on the bottom portion, wherein R₁ is a ratio of T₁ to T₂;

a second dielectric liner disposed over the first dielectric liner, the second dielectric liner having a thickness T₃ on the top portion and a thickness T₄ on the bottom portion, wherein R₂ is a ratio of T₃ to T₄, and R₁ is greater than R₂; and

a conductive material disposed over the second dielectric liner.

15. The semiconductor component of claim 14, wherein R₁ ranges from about 5 to about 20.

16. The semiconductor component of claim 14, wherein the semiconductor substrate has a thickness ranging from about 10 microns (μ

m) to about 200 μ

m.

17. The semiconductor component of claim 14, wherein R₂ ranges from about 1 to about 5.

18. The semiconductor component of claim 14, further comprising a third dielectric liner between the second dielectric liner and the conductive material, the third dielectric liner has a thickness T₅ on the top portion and a thickness T₆ on the bottom portion, wherein R₃ is a ratio of T₅ to T₆, and R₃ is greater than R₂.

19. The semiconductor component of claim 18, wherein R₃ ranges from about 5 to about 20.

20. The semiconductor component of claim 18, wherein an etching rate of the first dielectric liner in an HF solution is different from an etching rate of the second dielectric liner in the HF solution.