NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
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1. A nitride semiconductor light-emitting device having an optical waveguide, the nitride semiconductor light-emitting device comprising, in the following order, at least:
- a first cladding layer;
an active layer; and
a second cladding layer,wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.
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Abstract
A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.
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Citations
8 Claims
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1. A nitride semiconductor light-emitting device having an optical waveguide, the nitride semiconductor light-emitting device comprising, in the following order, at least:
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a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification