METHODS OF FORMING A LAYER OF SILICON ON A LAYER OF SILICON/GERMANIUM
First Claim
1. A method of forming a transistor, comprising:
- performing a deposition process in a deposition chamber to form a silicon/germanium material on a semiconducting substrate;
after forming said silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into said deposition chamber during said heating process; and
after said temperature of said substrate reaches said desired silicon formation temperature, forming a layer of silicon on said silicon/germanium material.
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Accused Products
Abstract
Disclosed herein are various methods of forming a layer of silicon on a layer of silicon/germanium. In one example, a method disclosed herein includes forming a silicon/germanium material on a semiconducting substrate, after forming the silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into the deposition chamber during the heating process, and, after the temperature of the substrate reaches the desired silicon formation temperature, forming a layer of silicon on the silicon/germanium material.
3 Citations
24 Claims
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1. A method of forming a transistor, comprising:
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performing a deposition process in a deposition chamber to form a silicon/germanium material on a semiconducting substrate; after forming said silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into said deposition chamber during said heating process; and after said temperature of said substrate reaches said desired silicon formation temperature, forming a layer of silicon on said silicon/germanium material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of forming a transistor, comprising:
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performing a first deposition process in a deposition chamber to form a silicon/germanium material on a semiconducting substrate at a first deposition temperature that falls within the range of about 680-750°
C.;after forming said silicon/germanium material, performing a heating process to raise a temperature of said substrate to a desired silicon formation temperature that falls within the range of about 750-900°
C. while flowing a silicon-containing precursor and a chlorine-containing precursor into said deposition chamber during said heating process; andafter said temperature of said substrate reaches said desired silicon formation temperature, forming a layer of silicon on said silicon/germanium material. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method of forming a transistor, comprising:
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performing a first deposition process in a deposition chamber to form a silicon/germanium material on a semiconducting substrate at a first deposition temperature that falls within the range of about 680-750°
C.;after forming said silicon/germanium material, performing a heating process to raise a temperature of said substrate to a desired silicon formation temperature that falls within the range of about 750-900°
C. while flowing a silicon-containing precursor, a chlorine-containing precursor and hydrogen into said deposition chamber during said heating process, wherein a flow rate of said silicon-containing precursor, said chlorine-containing precursor and said hydrogen falls within the range of about 50-500 sscm, 50-500 sscm and 50-500 sscm, respectively; andafter said substrate reaches said desired silicon formation temperature, forming a layer of silicon on said silicon/germanium material. - View Dependent Claims (22, 23, 24)
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Specification