SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Abstract
An object to provide a material suitably used for used for a semiconductor included in a transistor, a diode, or the like, with the use of a sputtering method. Specifically, an object is to provide a manufacturing process an oxide semiconductor film having high crystallinity. By intentionally adding nitrogen to the oxide semiconductor, an oxide semiconductor film having a wurtzite crystal structure that is a hexagonal crystal structure is formed. In the oxide semiconductor film, the crystallinity of a region containing nitrogen is higher than that of a region hardly containing nitrogen or a region to which nitrogen is not intentionally added. The oxide semiconductor film having high crystallinity and having a wurtzite crystal structure is used as a channel formation region of a transistor.
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Citations
17 Claims
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1. (canceled)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an insulating film containing nitrogen over a substrate including an insulating surface; introducing the substrate over which the insulating film containing nitrogen is formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that a substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.; andforming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that a substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over a substrate including an insulating surface; forming an insulating film containing nitrogen over the gate electrode layer; introducing the substrate over which the gate electrode layer and the insulating film containing nitrogen are formed, into a vacuum chamber; forming a first oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a first deposition condition that a substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C.; andforming a second oxide semiconductor film containing nitrogen by sputtering in a nitrogen containing atmosphere under a second deposition condition that a substrate temperature is higher than or equal to 150°
C. and lower than or equal to 450°
C. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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Specification